Gate Drive Circuit Tandem Channels for Lower Transistor Stress
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Solution Overview
Problem
Existing drive circuits with transistors having a tandem structure experience high source-drain voltage differences, leading to rapid deterioration due to the high withstand voltage requirement.
Innovation Solution
The drive circuit design includes transistors with a tandem structure where the second channel is longer or narrower than the first channel, or with lower electron/hole mobility in the second semiconductor portion, reducing the source-drain voltage and thus the withstand voltage required.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Use of energy by moving object
If the first transistor has a tandem structure with equal dimension channels and same semiconductor material, then the voltage applied per channel is reduced, but the source-drain voltage difference becomes large causing high withstand voltage requirement and rapid deterioration
Solution Approach 1:
The patent applies local quality by making the semiconductor material of the second channel different from the first channel, and/or making the channel dimensions asymmetric. This creates localized differences in electrical properties between the two channels, allowing the second channel to have lower mobility or higher resistance to compensate for voltage drops and reduce the source-drain voltage difference, thereby reducing the withstand voltage requirement and slowing down transistor deterioration.
2Reliability
If the second channel has different material or dimensions, then the source-drain voltage difference is reduced, but the device complexity increases
Solution Approach 1:
The patent applies parameter changes by modifying the semiconductor material composition, carrier mobility, or geometric dimensions (length and width) of the second channel relative to the first channel. These parameter adjustments allow the tandem structure to achieve balanced voltage distribution across channels, reducing the peak source-drain voltage difference and lowering the withstand voltage requirement without requiring complex additional circuitry.
Data Source
AI summary
A unit circuit of a gate drive circuit includes a transistor T2 that receives a set signal and a transistor T3 that receives a reset signal. At least one of the transistors T2 and T3 includes a first channel and a second channel. A length of the second channel is longer than a length of the first channel, or a width of the second channel is narrower than a width of the first channel, or mobility of a second semiconductor layer of the transistor T2 is lower than mobility of a first semiconductor layer of the transistor T2.