Gate Driver Aging Circuit to Suppress Display Leakage Current
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Solution Overview
Problem
Leakage currents in gate drivers of display devices reduce the reliability of transistors, leading to decreased performance.
Innovation Solution
A gate driver design incorporating specific transistor configurations and capacitors, along with an aging operation to prevent leakage currents by applying stress to transistors, thereby maintaining their characteristics.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If voltage is applied to transistors in the gate driver, then the gate driver can operate and provide gate signals, but leakage current flows through the transistors which decreases reliability
Solution Approach 1:
The patent applies an aging operation before normal operation to pre-stress the transistors and reduce subsequent leakage current. The aging transistor (e.g., eighth transistor) is activated in advance to apply stress to other transistors (first and third transistors) during a dedicated aging period, preparing them for reduced leakage during normal operation. This preliminary action addresses the leakage issue before it affects reliability during actual gate signal generation.
Solution Approach 2:
The patent introduces an aging transistor as an intermediary element that mediates the stress application to other transistors. The aging transistor (e.g., eighth transistor with gate electrode receiving aging signal) acts as a mediator that, when activated, applies voltage stress to the first and third transistors through shared control nodes, thereby reducing their leakage current without requiring direct modification to their operational circuits.
2Reliability
If an aging operation is performed on transistors, then leakage current is reduced and reliability is improved, but additional transistors and control circuits are required
Solution Approach 1:
The aging transistor serves multiple functions: it acts as a normal switching transistor during gate signal generation and as an aging operation executor during the aging period. The same transistor (e.g., eighth transistor) performs dual roles - generating gate signals during normal operation and applying stress to reduce leakage in other transistors during aging operation, thereby reducing the need for separate dedicated aging circuitry.
Solution Approach 2:
The patent merges the aging operation circuitry with the normal gate driver circuitry by sharing transistors, control nodes, and voltage supply lines. The aging transistor is integrated into the existing stage structure, sharing control nodes (first control node, second control node) with other transistors, and using the same high gate voltage and low gate voltage supplies, thereby combining two functions into a unified circuit structure.
Data Source
AI summary
A gate driver includes a plurality of stages, each including: a first transistor including a first electrode, and a second electrode connected to a first control node; a third transistor including a first electrode connected to the first control node; and a second electrode connected to a second control node; a fifth transistor including a gate electrode connected to an inverting control node, and a second electrode connected to a gate output node; a sixth transistor including a gate electrode connected to the second control node, and a second electrode connected to the gate output node; a seventh transistor including a first electrode, and a second electrode connected to the first control node; and an eighth transistor including a gate electrode to receive an aging signal, a first electrode to receive an aging voltage, and a second electrode connected to the first electrode of the first transistor.