Gate Driver Voltage Line Layout for Narrow OLED Bezel

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Solution Overview

Problem

The gate bezel area in organic light emitting display devices is enlarged due to the implementation of the gate driving circuit, which affects design and manufacturing efficiency.

Innovation Solution

A symmetrical structure is adopted for the output buffer block of the gate driving panel circuit, with gate low-potential voltage connection lines extended through the central area, and high-potential and low-potential voltage lines positioned on different sides of the gate driving circuit.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Ease of operation

If the gate driving circuit is implemented in the display panel, then the gate driving function is achieved, but the gate bezel area increases

Engineering Contradiction:
Improvegate driving functionVSAvoidgate bezel area
Core Design Contradiction:
Ease of operationVSArea of stationary object

Solution Approach 1:

The patent applies dimensional change by transitioning from a planar arrangement of voltage lines to a three-dimensional stacked configuration. Multiple voltage lines (high-potential and low-potential) are arranged in different layers and positions around the gate driving circuit, utilizing vertical and spatial dimensions to reduce the horizontal footprint of the gate bezel area while maintaining all necessary electrical connections.

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

2Reliability

If voltage lines are arranged around the gate driving circuit, then electrical connections are established, but the gate bezel area is enlarged

Engineering Contradiction:
Improveelectrical connectionVSAvoidgate bezel area
Core Design Contradiction:
ReliabilityVSArea of stationary object

Solution Approach 1:

The patent implements nesting by placing voltage lines in nested positions around the gate driving circuit. The high-potential voltage lines and low-potential voltage lines are arranged in concentric or adjacent layers, with connection lines extending through central areas to reach the gate driving circuit. This nested arrangement allows multiple electrical connections to be packed into a compact spatial configuration, reducing the overall gate bezel area while maintaining reliable electrical connectivity.

Inventive Principle:
Principle #7Nested doll (Nesting)

3Reliability

If multiple gate low-potential voltages with different levels are used, then voltage ripples are reduced, but device complexity increases

Engineering Contradiction:
Improvevoltage stabilityVSAvoidvoltage level configuration
Core Design Contradiction:
ReliabilityVSDevice complexity

Solution Approach 1:

The patent applies parameter changes by introducing multiple gate low-potential voltage lines with different voltage levels (e.g., first gate low-potential voltage and second gate low-potential voltage at different potentials). This parameter variation allows the system to reduce voltage ripples and improve signal stability by providing multiple voltage references, while the complexity is managed through systematic arrangement of these voltage lines around the gate driving circuit.

Inventive Principle:
Principle #35Parameter changes

Data Source

PatentUS12482428B2Display panel includes a plurality of high-potential voltage lines and low-potential voltage lines on different sides of a gate driving circuit and display device
Publication Date: 2025.11.25 LG DISPLAY CO LTD
  • US12482428B2 patent drawing
  • US12482428B2 patent drawing
  • US12482428B2 patent drawing

AI summary

A display panel having a display area where a plurality of subpixels are disposed, a gate driving circuit disposed in a non-display area outside the display area to supply a plurality of scan signals to the plurality of subpixels, a plurality of gate high-potential voltage lines which are disposed in a side of the gate driving circuit for transferring a plurality of gate high-potential voltages, a plurality of gate low-potential voltage lines which are disposed in other side of the gate driving circuit for transferring a plurality of gate low-potential voltages, and a plurality of gate low-potential voltage connection lines which are extended through a central area of the gate driving circuit for transferring the plurality of gate low-potential voltages to the gate driving circuit.