Gate Driver Bootstrap Undervoltage Detection With Current Mirror

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Solution Overview

Problem

Existing gate driver circuits for N-type high-side transistors face challenges in reliably turning on the transistor due to insufficient potential difference across the bootstrap and switching lines, leading to inefficiencies and high current consumption.

Innovation Solution

A gate driver circuit with an under voltage detection circuit using a current mirror and MOS transistors for accurate threshold detection, coupled with resistors and a comparator to manage potential differences and reduce current consumption.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If a bootstrap circuit is used to drive the high-side transistor, then the transistor can be turned on, but the potential difference between the bootstrap line and output line becomes insufficient, leading to unreliable transistor operation

Engineering Contradiction:
Improvetransistor turn-on reliabilityVSAvoidcurrent consumption
Core Design Contradiction:
ReliabilityVSUse of energy by moving object

Solution Approach 1:

The circuit performs preliminary voltage level adjustment by boosting the bootstrap line voltage before the transistor switching operation. The voltage boosting circuit pre-charges the bootstrap capacitor to a higher voltage level, ensuring that when the high-side transistor needs to turn on, sufficient gate-source voltage is already available, eliminating the need for excessive current during the switching event.

Inventive Principle:
Principle #10Preliminary action

Solution Approach 2:

The invention changes the voltage parameter of the bootstrap line by introducing a voltage boosting circuit that increases the bootstrap voltage beyond the standard supply voltage. This parameter change ensures that the potential difference between the bootstrap line and output line remains sufficient even when the output line voltage rises, maintaining reliable transistor operation without increasing current consumption.

Inventive Principle:
Principle #35Parameter changes

2Reliability

If the potential difference between bootstrap line and output line is increased to ensure reliable transistor turn-on, then transistor operation becomes reliable, but current consumption increases

Engineering Contradiction:
Improvetransistor turn-on reliabilityVSAvoidcircuit complexity
Core Design Contradiction:
ReliabilityVSDevice complexity

Solution Approach 1:

The voltage boosting circuit serves multiple functions: it boosts the bootstrap voltage to ensure reliable high-side transistor turn-on, it provides stable voltage reference for the gate driver, and it reduces the burden on the bootstrap capacitor. By making this circuit multi-functional, the patent avoids adding separate circuits for each function, thereby limiting the increase in overall circuit complexity while achieving reliable transistor operation.

Inventive Principle:
Principle #6Universality (Multi-functionality)

3Device complexity

If conventional bootstrap circuit design is used, then circuit simplicity is maintained, but accurate detection of under voltage states becomes difficult

Engineering Contradiction:
Improvecircuit simplicityVSAvoidunder voltage detection accuracy
Core Design Contradiction:
Device complexityVSMeasurement precision

Solution Approach 1:

The patent introduces an intermediary voltage detection circuit that monitors the actual voltage level at the bootstrap line and compares it against threshold values. This intermediary detection mechanism provides accurate under-voltage detection without requiring complex external monitoring equipment, maintaining circuit simplicity while achieving precise voltage state detection through the dedicated comparison circuitry.

Inventive Principle:
Principle #24Intermediary (Mediator)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The solution enables reliable transistor operation with reduced current consumption, enhancing efficiency and accuracy in detecting under voltage states.

Implementation Method 1

a bootstrap line BST to be connected to the high-side transistor MH via a bootstrap capacitor CBST

Methodology Applied
Scientific EffectCapacitance: Capacitance

Implementation Method 2

the under voltage detection circuit includes a current mirror circuit CM1 connected to the bootstrap line BST

Methodology Applied
Scientific EffectCurrent mirror effect:

Implementation Method 3

a comparator 262 comparing a voltage drop across the second resistor R2 with a threshold voltage

Methodology Applied
Scientific EffectVoltage comparison:

Data Source

PatentUS20250385665A1Gate driver circuit and motor driving device
Publication Date: 2025.12.18 ROHM CO LTD
  • US20250385665A1 patent drawing
  • US20250385665A1 patent drawing
  • US20250385665A1 patent drawing

AI summary

An under voltage detection circuit compares a potential difference between a bootstrap line and an output line with a threshold voltage. A voltage line generates a voltage lower by a predetermined voltage than the bootstrap line. A current mirror circuit is connected to the bootstrap line. A first resistor and a MOS diode are connected in series between an input node of the current mirror circuit and the output line. A second resistor is connected between an output node of the current mirror circuit and the voltage line. A comparator compares a voltage drop across the second resistor with a threshold voltage.