Gate Driver Miller Clamp Circuit for False Turn-On Prevention

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Solution Overview

Problem

Existing technologies require large Field Effect Transistors (FETs) to prevent false on events in power transistors, which occupy significant space and are inefficient.

Innovation Solution

A power switching system utilizing a current buffer with bipolar junction transistors and a gate driver circuit, including multiple circuit branches and switches, to control the power transistor without needing large FETs, by managing current levels and turn-off times to prevent false activation.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If large FETs are used to create a hard off and prevent false on events, then reliability is improved, but area occupied increases significantly

Engineering Contradiction:
Improveprevention of false on eventsVSAvoidspace occupied by FETs
Core Design Contradiction:
ReliabilityVSArea of stationary object

Solution Approach 1:

The patent introduces a Miller clamp circuit as an intermediary component that actively clamps the gate-drain voltage during switching transitions. This Miller clamp prevents the Miller capacitance from coupling voltage spikes back to the gate, thereby preventing false turn-on events without requiring oversized FETs. The Miller clamp acts as a mediator between the problematic Miller capacitance and the gate terminal, resolving the contradiction between reliability and area.

Inventive Principle:
Principle #24Intermediary (Mediator)

2Reliability

If large FETs are used to prevent Miller capacitance activation, then reliability is improved, but device complexity increases

Engineering Contradiction:
Improveprevention of false on eventsVSAvoidcomplexity of transistor configuration
Core Design Contradiction:
ReliabilityVSDevice complexity

Solution Approach 1:

The patent segments the gate driver functionality into distinct components: the main power FET, the Miller clamp circuit with its own switching transistor, and associated control logic. This segmentation allows each component to be optimized independently - the Miller clamp handles the false-on prevention specifically, while the main FET can be sized appropriately for power handling. This modular segmentation reduces overall device complexity compared to using a single oversized FET for all functions.

Inventive Principle:
Principle #1Segmentation

3Reliability

If large FETs are used to create a hard off, then reliability is improved, but manufacturing cost increases

Engineering Contradiction:
Improvehard off capabilityVSAvoidmanufacturing efficiency
Core Design Contradiction:
ReliabilityVSEase of manufacture

Solution Approach 1:

The Miller clamp circuit serves as an intermediary that enables reliable hard-off capability without requiring the main power FET to be excessively large. The Miller clamp's switching transistor provides the necessary gate control to ensure complete turn-off, while the main FET can be manufactured at optimal sizes for its power handling role. This separation of concerns improves manufacturing efficiency by allowing each component to be sized for its specific function rather than requiring all components to be oversized.

Inventive Principle:
Principle #24Intermediary (Mediator)

Data Source

PatentUS12615034B2FET driver circuit
Publication Date: 2026.04.28 QORVO US INC
  • US12615034B2 patent drawing
  • US12615034B2 patent drawing
  • US12615034B2 patent drawing

AI summary

Embodiments of a power switching system are disclosed. In some embodiments, the system includes: a power transistor having a control terminal, a first transistor terminal, and a second transistor terminal; a current buffer that includes a bipolar junction transistor connected across the control terminal and the first transistor terminal, the bipolar junction transistor having a base; a gate driver circuit having a first circuit branch connected to the base of the bipolar junction transistor and a second circuit branch connected to the base of the bipolar junction transistor, wherein: the first circuit branch includes a first switch for opening and closing the first circuit branch; the second circuit branch includes a second switch for opening and closing the second circuit branch and a current source. In some embodiments, the power transistor is a Silicon Carbide field effect transistor or a Gallium Nitride field effect transistor.