Gate Driver Circuit Using Parallel MOSFETs for Lower Power

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Solution Overview

Problem

Conventional switch driver circuits require large P-type field effect transistors to accommodate a range of voltage values, leading to high power consumption and significant space usage.

Innovation Solution

A switch driver circuit with a set of parallel switches, including a P-type field effect transistor in parallel with an N-type field effect transistor, where the control signal selectively activates both transistors simultaneously to control the external switch, and a voltage booster circuit generates a boosted voltage to enhance the N-type transistor's ON state, reducing the size and power requirements.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Adaptability or versatility

If a large P-type field effect transistor is used to accommodate a range of voltage values, then the drive capability is improved, but the power consumption increases and the space occupied increases

Engineering Contradiction:
Improvevoltage accommodation rangeVSAvoidpower consumption
Core Design Contradiction:
Adaptability or versatilityVSUse of energy by moving object

Solution Approach 1:

The patent divides the single large P-type transistor function into two parallel transistors (P-type and N-type). The N-type transistor handles the voltage accommodation function while the P-type transistor provides the drive capability, allowing each transistor to be smaller and more efficient while maintaining overall system performance.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The patent changes the parameter configuration by introducing an N-type transistor with different electrical characteristics (electron mobility, threshold voltage) to work in parallel with the P-type transistor. This parameter diversity allows the system to achieve the same voltage accommodation range with lower individual device sizes and reduced power consumption.

Inventive Principle:
Principle #35Parameter changes

2Adaptability or versatility

If a large P-type field effect transistor is used to accommodate a range of voltage values, then the drive capability is improved, but the space occupied increases

Engineering Contradiction:
Improvevoltage accommodation rangeVSAvoidcircuit space
Core Design Contradiction:
Adaptability or versatilityVSArea of stationary object

Solution Approach 1:

The patent segments the function of a single large P-type transistor into two parallel transistors with different types (P-type and N-type). This segmentation allows each transistor to be physically smaller, reducing the total area occupied in the circuit while maintaining the voltage accommodation capability through their parallel configuration.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The patent employs asymmetric device pairing by using both P-type and N-type transistors with different electrical characteristics. This asymmetric configuration allows optimization of each device's size for its specific function, reducing the total area compared to using a single large symmetric P-type transistor for all functions.

Inventive Principle:
Principle #4Asymmetry

3Use of energy by moving object

If a smaller N-type transistor is used in conjunction with a P-type transistor, then the size and power requirements are reduced, but the circuit configuration becomes more complex

Engineering Contradiction:
Improvepower consumptionVSAvoidcircuit configuration
Core Design Contradiction:
Use of energy by moving objectVSDevice complexity

Solution Approach 1:

The patent merges the functions of voltage accommodation and drive capability into a single parallel transistor pair configuration. By combining the N-type transistor (for voltage handling) and P-type transistor (for drive capability) in parallel, the circuit achieves reduced power consumption without requiring multiple separate stages or complex control logic.

Inventive Principle:
Principle #5Merging (Combining)

Solution Approach 2:

The parallel transistor pair serves multiple functions simultaneously: the N-type transistor handles voltage accommodation, the P-type transistor provides drive capability, and together they enable efficient switching operation. This multi-functionality reduces the need for additional circuit elements and simplifies the overall configuration despite the initial appearance of added complexity.

Inventive Principle:
Principle #6Universality (Multi-functionality)

Data Source

PatentUS8476939B1Switching power supply gate driver
Publication Date: 2013.07.02 INFINEON TECHNOLOGIES AMERICAS CORP
  • US8476939B1 patent drawing
  • US8476939B1 patent drawing
  • US8476939B1 patent drawing

AI summary

One configuration of the present disclosure is directed to a switch driver circuit. The switch driver circuit can include an input to receive a control signal; an output to control a state of an switch in accordance with the control signal; and a set of parallel switches. The set of parallel switches in the switch driver circuit includes a P-type field effect transistor in parallel with an N-type field effect transistor. During operation, via variations in the control signal, the control signal selectively and electrically couples a voltage source signal to the output of the switch driver circuit to control the state of the switch.