Gate Driving Circuit Preventing Q-Node Leakage During Panel Cutting
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Conventional gate driving circuits experience distortion of gate signals due to discharge of the Q node caused by leakage current during the last stage of panel cutting in display panels, leading to driving defects and increased power consumption.
Innovation Solution
The gate driving circuit includes a pull-up transistor, a pull-down transistor, and a first transistor coupled between the source electrode of the pull-down transistor and the Q node of the previous stage, which prevents the discharge of the Q node by aligning the first transistor in the next stage and using a global reset signal to maintain voltage levels.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Adaptability or versatility
If the gate driving circuit is embedded in the display panel and the panel is cut to create desired sizes, then the display panel can be customized to various sizes, but the gate electrode of the transistor driving the Q node becomes floated during the last stage of cutting, causing discharge of the Q node due to leakage current and distorted gate signals
Solution Approach 1:
The patent applies preliminary action by configuring the first transistor T1 in the N stage to have its gate electrode connected to a fixed potential through the output terminal of the N stage before cutting occurs. This pre-configuration ensures that when the panel is cut and the gate electrode would otherwise become floated, it maintains a stable potential that prevents leakage current discharge of the Q node, thereby preventing gate signal distortion while allowing panel size customization
Solution Approach 2:
The patent uses the output terminal of the N stage as an intermediary element that provides a fixed potential to the gate electrode of the first transistor T1. This intermediary connection acts as a mediator between the cutting process and the transistor gate electrode, ensuring that the gate electrode maintains a stable potential even when physically separated from the rest of the circuit during panel cutting, thus preventing the harmful discharge effect
2Productivity
If the conventional gate driving circuit is used during panel cutting, then the panel can be manufactured efficiently, but leakage current causes discharge of the Q node leading to increased power consumption
Solution Approach 1:
The patent applies preliminary action by pre-configuring the first transistor T1 in the N stage with its gate electrode connected to a fixed potential through the output terminal before the panel cutting process. This pre-configuration prevents leakage current discharge of the Q node during cutting, eliminating the need for additional power consumption that would be required to compensate for signal distortion and maintain proper circuit operation during manufacturing
Solution Approach 2:
The patent converts the potential harm of leakage current during panel cutting into a beneficial effect by using the same leakage current path to charge the gate electrode of the first transistor T1 to a fixed potential. This transforms the harmful leakage current into a useful charging mechanism that stabilizes the gate electrode potential, preventing Q node discharge and reducing power consumption while maintaining manufacturing efficiency
Data Source
AI summary
A gate driving circuit that prevents the discharge of the Q node due to the leakage current in the last stage when the panel is cut, thereby preventing distortion of the gate signal, and a display including the same is disclosed. The gate driving circuit includes a plurality of stages driving a plurality of gate lines, and each of the plurality of stages includes a pull-up transistor pull-up driving an output terminal in response to a signal of a Q node of a N stage; a pull-down transistor pull-down driving an output terminal in response to a signal of a Qb node of the N stage; and a first transistor coupled between a source electrode of the pull-down transistor and a Q node of a N−1 stage, and pull-down driving the Q node of the N−1 stage in response to a signal of the output terminal of the N stage.