Gate Electrode Structure for Larger Semiconductor Active Area
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Solution Overview
Problem
Semiconductor devices face challenges in maximizing their active area due to the physical and electrical separation requirements of electrodes, which limits the size of the region available for connections and functionality.
Innovation Solution
The semiconductor device incorporates a gate electrode with an external exposed portion flush with the sealing resin, and a gate electrode pad connection portion that is continuous with the gate electrode pad, allowing for a compact arrangement that reduces the size of the gate electrode pad while maintaining electrical connectivity and expanding the active area by using a protrusion structure that is sandwiched between the gate electrode pad and the sealing resin.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If the gate electrode pad is made large to ensure reliable electrical connection, then the connection reliability is improved, but the active area of the chip is reduced
Solution Approach 1:
The gate electrode structure extends in the vertical dimension by forming a protrusion that protrudes from the front surface of the sealing resin. This three-dimensional configuration allows the electrode to maintain a smaller footprint on the chip surface while achieving reliable electrical connection through the extended vertical path, thereby resolving the contradiction between connection reliability and active area.
Solution Approach 2:
The gate electrode pad connection portion is nested within the sealing resin structure, with the protrusion embedded in the resin matrix. This nesting arrangement allows the electrode connection path to be integrated within the existing package structure, minimizing the space required on the chip surface while maintaining connection integrity.
2Area of moving object
If the gate electrode pad region is minimized to increase active area, then the active area is improved, but the electrical connection reliability may deteriorate
Solution Approach 1:
By transitioning from a two-dimensional pad layout to a three-dimensional protrusion structure, the invention achieves extended electrical connection path length within a minimal surface footprint. The vertical extension compensates for the reduced horizontal area, maintaining connection reliability while maximizing active area.
Solution Approach 2:
The invention changes the geometric parameters of the gate electrode by forming a protrusion with specific dimensions (protruding from the sealing resin front surface). This parameter transformation allows the electrode to achieve effective connection length without requiring large surface area, thus resolving the area-reliability trade-off.
3Area of moving object
If the gate electrode structure is made compact to expand active area, then the active area is improved, but the device complexity increases
Solution Approach 1:
The gate electrode is segmented into distinct functional portions: a gate electrode pad connection portion embedded in the sealing resin and a protrusion extending from the front surface. This segmentation allows each portion to be optimized for its specific function while maintaining overall structural simplicity and manufacturability.
Data Source
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AI summary
According to one embodiment, there is provided a semiconductor device including a chip (1), and a gate electrode (3) connected to a gate electrode pad (13) provided on the chip (1). The gate electrode (3) includes an external exposed portion (3A) having an external exposed surface that is flush with an external exposed surface of a sealing resin (R), and a gate electrode pad connection portion (3B) continuous with the external exposed portion (3A) and connected to the gate electrode pad (13), the gate electrode pad connection portion (3B) including a portion sandwiched between the gate electrode pad (13) and a part of the sealing resin (R).