Gate Electrode Fabrication with In-Situ Capping Removal and Nitridation
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Solution Overview
Problem
Current methods for fabricating semiconductor device electrode structures face challenges in achieving high integration density, fast operating speed, low power consumption, and improved electrical and reliability characteristics, particularly due to difficulties in forming second gate electrodes without oxidized capping layers and ensuring productivity in the fabrication process.
Innovation Solution
A method involving the formation of a first gate electrode, removal of the electrode capping layer, growth of a second gate electrode using the first gate electrode as a seed, and nitridation of the second gate electrode's upper portion, utilizing an apparatus with plasma and gas supply systems to enhance the fabrication process.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a conventional fabrication process is used to form gate electrodes with capping layers, then the electrodes are protected from oxidation, but the process complexity increases and productivity decreases due to additional removal steps
Solution Approach 1:
The patent extracts and removes the electrode capping layer from the fabrication process by performing a removal process that selectively eliminates the capping layer, allowing direct formation of the second gate electrode on the first gate electrode without requiring the capping layer to remain
Solution Approach 2:
The patent applies preliminary action by forming the first gate electrode with its capping layer in advance, then performing the removal process before forming the second gate electrode, ensuring the surface is properly prepared for subsequent electrode formation
2Reliability
If the electrode capping layer is retained on the first gate electrode, then oxidation is prevented, but the second gate electrode cannot be properly formed
Solution Approach 1:
The capping layer is extracted and removed through a dedicated removal process that selectively eliminates the capping layer material, enabling direct contact between the second gate electrode and the first gate electrode surface
Solution Approach 2:
The removal process acts as an intermediary step that transitions the electrode structure from a capped state to an exposed state, facilitating proper formation of the second gate electrode on the first gate electrode
3Manufacturing precision
If multiple processing steps are performed out-of-situ, then each step can be optimized, but the total fabrication time increases
Solution Approach 1:
The patent merges multiple processing steps into a single in-situ fabrication process, where the removal process, second gate electrode formation, and nitridation are performed sequentially in one continuous operation without breaking the vacuum or exposing the structure to ambient conditions
Solution Approach 2:
The fabrication process maintains continuity of useful action by performing all critical steps without interruption or exposure to ambient environment, ensuring the process chamber remains in a controlled state throughout the entire fabrication sequence
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach improves electrical characteristics, reduces fabrication failures, and increases productivity by allowing for in-situ processing of electrode structures, enabling the formation of semiconductor devices with enhanced performance and reduced process time.
Implementation Method 1
a shower head configured to provide plasma to the plate, a plasma box configured to provide the plasma to the shower head
Implementation Method 2
nitridating an upper portion of the second gate electrode, the interface forming gas may contain a nitrogen atom
Data Source
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AI summary
An apparatus and method for fabricating an electrode structure. The method may include forming a first gate electrode, performing a removal process on an electrode capping layer formed on the first gate electrode, forming a second gate electrode on the first gate electrode, and nitridating an upper portion of the second gate electrode.