Gate Electrode Deposition in High-Aspect-Ratio Semiconductor Stacks
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Solution Overview
Problem
The increasing demand for high-performance semiconductor devices with vertical transistor structures poses challenges in achieving reliable manufacturing methods that can efficiently form gate electrodes with precise control over deposition processes, particularly in creating nucleation and bulk layers with optimal properties.
Innovation Solution
A method involving the alternation of sacrificial layers and interlayer insulating layers on a substrate, where specific temperature-controlled source and reactant gases are used to form nucleation and bulk layers within lateral openings, utilizing a deposition apparatus with temperature-controlled gas supply lines to enhance deposition efficiency and reliability.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional deposition methods are used to form gate electrodes in high-aspect-ratio lateral openings, then the deposition process is simple, but the step coverage is poor and uniformity is lost
Solution Approach 1:
The patent applies parameter changes by heating source gas to a first temperature (e.g., 50-150°C) and reactant gas to a second temperature (e.g., 50-150°C) before supply, while the substrate is maintained at a third temperature (e.g., 150-300°C). This multi-temperature parameter control optimizes deposition kinetics and adatom mobility, achieving superior step coverage and uniformity in high-aspect-ratio lateral openings without complicating the overall process flow
Solution Approach 2:
The patent implements preliminary action by pre-heating the source gas and reactant gas to specific temperatures before they enter the deposition chamber. This pre-treatment of gases ensures optimal reaction conditions from the start of deposition, improving nucleation efficiency and film quality in difficult-to-reach lateral openings, thereby enhancing step coverage before the actual deposition begins
2Productivity
If high deposition rates are achieved by increasing source gas flow, then productivity increases, but flux imbalance occurs and uniformity deteriorates
Solution Approach 1:
The patent resolves the contradiction between deposition rate and uniformity by changing the temperature parameters of source gas and reactant gas. By optimizing their temperatures before supply, the reaction efficiency is enhanced, allowing faster deposition rates while maintaining uniform flux distribution. This prevents flux imbalance that would otherwise occur at high deposition rates, achieving both high productivity and manufacturing precision
Solution Approach 2:
The patent employs feedback control by monitoring deposition conditions and adjusting gas temperatures and flow rates dynamically. This ensures that even at high deposition rates, the flux remains balanced across the substrate surface, maintaining uniformity while achieving high productivity through real-time parameter optimization
3Productivity
If more source gas is supplied to improve deposition rate, then productivity increases, but the amount of source gas used increases
Solution Approach 1:
The patent optimizes source gas temperature (e.g., 50-150°C) to enhance reaction efficiency. This allows achieving high deposition rates with reduced source gas consumption, as the heated gas reacts more effectively upon contact with the substrate. The improved reaction kinetics mean less source gas is wasted, simultaneously increasing productivity and reducing material loss
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach improves the deposition rate and step coverage of gate electrodes, ensuring uniformity and reliability even in high-aspect-ratio structures, while reducing the amount of source gas used and preventing flux imbalance.
Implementation Method 1
The source gas may be heated to a first temperature and is supplied from a gas supply unit in a deposition apparatus at the first temperature, the second reactant gas may be heated to a second temperature and is supplied from the gas supply unit in the deposition apparatus at the second temperature
Data Source
AI summary
A method of manufacturing a semiconductor device may include forming a stack structure by alternately stacking sacrificial layers and interlayer insulating layers on a substrate, forming channel structures extending through the stack structure, forming openings extending through the stack structure, forming lateral openings by removing the sacrificial layers exposed by the openings, and forming gate electrodes in the lateral openings. Forming the gate electrodes may include supplying a source gas containing tungsten (W) wherein the source gas is heated to a first temperature and is supplied in a deposition apparatus at the first temperature, supplying a reactant gas containing hydrogen (H) subsequently to supplying the source gas, wherein the reactant gas is heated to a second temperature and is supplied in the deposition apparatus at the second temperature, and supplying a purge gas subsequently to supplying the reactant gas.