Semiconductor Gate Electrode Etch Stop Patterns for Leakage Reduction
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Solution Overview
Problem
The existing manufacturing processes for semiconductor devices with high-voltage transistors face challenges in efficiently producing transistors that can withstand high voltages and minimize leakage current, particularly in aligning gate electrodes with insulation pillars for improved breakdown voltage and resistance.
Innovation Solution
The solution involves forming a semiconductor device with insulation pillars and etch stop patterns buried in the gate electrode, where both ends of the gate electrode overlap with the insulation pillars, enhancing the effective distance between the gate electrode and contact plugs and reducing leakage current by using specific materials like SiN or TiN for etch selectivity.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If the gate electrode is aligned to overlap with the insulation pillars, then the breakdown voltage increases and high voltage resistance improves, but the manufacturing precision and alignment difficulty worsen
Solution Approach 1:
The patent introduces etch stop patterns as intermediary structures that are formed before the gate electrode. These patterns serve as alignment references and protective barriers during the etching process, making it easier to align the gate electrode with the insulation pillars without requiring extremely high manufacturing precision.
Solution Approach 2:
The etch stop patterns are formed in advance before the gate electrode is created. This preliminary action establishes the alignment framework and protective structure needed for subsequent processing steps, reducing the alignment difficulty when forming the gate electrode.
2Object-generated harmful factors
If the effective distance between the gate electrode and contact plugs is increased, then leakage current decreases, but the device area increases
Solution Approach 1:
The patent applies different structural configurations to different regions of the device. The etch stop patterns are strategically positioned at specific locations to provide local protection and alignment, allowing the gate electrode to achieve proper spacing from contact plugs without uniformly increasing the entire device area.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration increases the breakdown voltage of high-voltage transistors, improves high voltage resistance, and reduces leakage current, making it easier to manufacture high-voltage transistors with improved characteristics.
Implementation Method 1
using specific materials like SiN or TiN for etch selectivity
Data Source
AI summary
A semiconductor device may include a substrate provided in a peripheral region, first and second insulation pillars formed in the substrate, and a gate electrode extending in a first direction from over the first insulation pillar to over the second insulation pillar, wherein the gate electrode includes first and second etch stop patterns, wherein the first etch stop pattern extends in the first direction from inside the gate electrode to over the first insulation pillar, and wherein the second etch stop pattern extends in the first direction from inside the gate electrode to over the second insulation pillar.