Gate Electrode Heat Absorber for Semiconductor Thermal Management
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Solution Overview
Problem
In planar-gate-type semiconductor devices, the high current density in the body-passing part leads to increased temperature, causing thermal expansion and potential damage to the insulator film and gate electrode, resulting in reduced insulation performance and device failure.
Innovation Solution
The insulator film is removed from the upper surface of the gate electrode in specific volume spaces above the body-passing part, and a heat absorber with greater thermal capacity is used to absorb heat, reducing temperature rise and preventing damage.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If the insulator film is provided on the upper surface of the gate electrode above the body-passing part, then insulation performance is maintained, but thermal expansion damage occurs to the insulator film due to high temperature
Solution Approach 1:
The insulator film is selectively removed from the upper surface of the gate electrode in the region directly above the body-passing part, extracting the harmful thermal expansion effect from that specific location while maintaining the insulator film in other regions to preserve insulation performance
Solution Approach 2:
The insulator film is provided only in specific regions where insulation is needed, while being omitted from the region above the body-passing part where thermal expansion occurs, creating local quality differences to address both insulation and thermal expansion issues
2Object-affected harmful factors
If the insulator film is removed from the upper surface of the gate electrode, then thermal expansion damage is prevented, but insulation performance between the gate electrode and upper electrode deteriorates
Solution Approach 1:
The insulator film is selectively provided only in regions where insulation is required, while being omitted from the region above the body-passing part, creating local quality differences that simultaneously prevent thermal expansion damage and maintain insulation performance where needed
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration effectively suppresses damage to the insulator film and maintains insulation performance, even under high current conditions, by absorbing heat generated in the body-passing part and reducing thermal expansion.
Implementation Method 1
a heat absorber being in contact with a surface of the gate electrode on its back side... capable of absorbing heat generated in the body-passing part
Data Source
AI summary
A semiconductor device may include a semiconductor substrate, an insulator film covering a part of an upper surface of the substrate, and a gate electrode opposing the upper surface via the insulator film. In the semiconductor substrate, a drift layer extending through a body layer to the upper surface opposes the gate electrode via the insulator film. The insulator film extends from the upper surface of the semiconductor substrate to an upper surface of the gate electrode by passing between the gate electrode and an upper electrode, and defines an opening at the upper surface of the gate electrode. A side surface of the opening of the insulator film is entirely located outside a volume space consisting of all straight lines that passes through the opposing surface of the drift layer at angle of 45 degrees to the opposing surface.