Gate Electrode Layout for Integrated Circuit Transistors

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Solution Overview

Problem

Conventional integrated circuit designs face limitations in transistor layout, particularly in the overlap of gate contact plugs over the active region, which can reduce transistor width and drive current, limiting integration and reliability.

Innovation Solution

A four-transistor layout for an integrated circuit substrate is proposed, featuring a common source region with quadrants and symmetric drain and gate electrodes, where gate contact plugs partially or fully overlap the active region, allowing for increased channel width and improved turn-on current.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Manufacturing precision

If gate contact plugs are positioned to avoid overlapping the active region, then manufacturing precision is improved, but transistor width and drive current are reduced

Engineering Contradiction:

Improvegate contact plug positioningVSAvoidtransistor drive current

Core Design Contradiction:

Manufacturing precisionVSProductivity

Solution Approach 1:

The gate electrode is designed with extending portions that protrude beyond the active region boundaries onto the isolation region. This dimensional extension allows the gate contact plug to be positioned over the extending portion on the isolation region, thereby avoiding overlap with the active region while maintaining proper electrical connection to the gate electrode.

Inventive Principle:

Principle #17Another dimension (Dimensionality change)

Solution Approach 2:

The gate electrode is segmented into a main body portion over the active region and extending portions over the isolation region. This segmentation allows different portions of the gate electrode to serve different functions: the main body provides gate control while the extending portions provide contact plug positioning surfaces.

Inventive Principle:

Principle #1Segmentation

2Manufacturing precision

If gate electrode extends beyond active region onto isolation region, then gate contact plug positioning is improved, but device complexity increases

Engineering Contradiction:

Improvegate contact plug alignmentVSAvoidgate electrode structure

Core Design Contradiction:

Manufacturing precisionVSDevice complexity

Solution Approach 1:

The extending portions of the gate electrode serve multiple functions: they provide a positioning surface for gate contact plugs to prevent overlap with the active region, and they maintain electrical continuity with the main gate electrode body. This multi-functionality reduces the need for additional separate structures.

Inventive Principle:

Principle #6Universality (Multi-functionality)

Data Source

PatentUS9418988B2Gate electrode and gate contact plug layouts for integrated circuit field effect transistors

Publication Date: 2016.08.16 SAMSUNG ELECTRONICS CO LTD

AI summary

A four transistor layout can include an isolation region that defines an active region, the active region extending along first and second different directions. A common source region of the four transistors extends from a center of the active region along both the first and second directions to define four quadrants of the active region that are outside the common source region. Four drain regions are provided, a respective one of which is in a respective one of the four quadrants and spaced apart from the common source region. Finally, four gate electrodes are provided, a respective one of which is in a respective one of the four quadrants between the common source region and a respective one of the four drain regions. A respective gate electrode includes a vertex and first and second extending portions, the first extending portions extending from the vertex along the first direction and the second extending portions extending from the vertex along the second direction.