Gate Electrode Segmentation for Dehydrogenation and Speed in Display Devices

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Solution Overview

Problem

Current light emitting display devices face challenges in achieving high-speed driving due to resistance issues and hydrogen removal inefficiencies in semiconductor layers, particularly in polycrystalline transistors.

Innovation Solution

The use of a light emitting display device structure with a driving transistor and polycrystalline switching transistor, where the gate electrode of the driving transistor is made of molybdenum for dehydrogenation and the gate electrode of the polycrystalline switching transistor is a low-resistive material like aluminum, ensuring efficient hydrogen removal and high-speed operation.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If the gate electrode of the driving transistor is made of molybdenum to enable dehydrogenation, then the transistor characteristics become constant and reliable, but the resistance increases causing signal delay

Engineering Contradiction:
Improvetransistor characteristics stabilityVSAvoidsignal transmission speed
Core Design Contradiction:
ReliabilityVSSpeed

Solution Approach 1:

The gate electrode is divided into two segments: the first gate electrode made of molybdenum for dehydrogenation and the second gate electrode made of low-resistive material for high-speed signal transmission. This segmentation allows each part to perform its specific function optimally without compromise

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

Different materials are applied to different parts of the gate electrode structure based on local functional requirements. The first gate electrode uses molybdenum where dehydrogenation is needed, while the second gate electrode uses low-resistive material where low resistance is critical

Inventive Principle:
Principle #3Local quality

2Ease of manufacture

If a single material is used for the gate electrode, then the structure is simple and easy to manufacture, but it cannot simultaneously achieve dehydrogenation and low resistance

Engineering Contradiction:
Improvegate electrode fabrication simplicityVSAvoidtransistor performance
Core Design Contradiction:
Ease of manufactureVSReliability

Solution Approach 1:

The gate electrode uses a composite structure with two different materials: molybdenum and low-resistive material. This composite approach combines the dehydrogenation capability of molybdenum with the low resistance property of the other material, achieving both functions that a single material cannot provide

Inventive Principle:
Principle #40Composite materials

3Speed

If the gate electrode is made of low-resistive material for high-speed driving, then signal delay is reduced, but dehydrogenation cannot be effectively performed

Engineering Contradiction:
Improvedriving speedVSAvoiddehydrogenation efficiency
Core Design Contradiction:
SpeedVSReliability

Solution Approach 1:

The gate electrode is segmented into two functional parts: the first gate electrode made of molybdenum dedicated to dehydrogenation, and the second gate electrode made of low-resistive material dedicated to high-speed signal transmission, allowing both requirements to be met simultaneously

Inventive Principle:
Principle #1Segmentation

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This configuration ensures constant transistor characteristics and enables high-speed driving without signal delay, improving the overall performance of the light emitting display device.

Implementation Method 1

dehydrogenation may be smoothly performed during the process in a polycrystalline semiconductor, and thus the characteristics of a driving transistor can be constantly secured

Methodology Applied
Scientific EffectDehydrogenation:

Data Source

PatentUS20240065031A1Light emitting display device
Publication Date: 2024.02.22 SAMSUNG DISPLAY CO LTD
  • US20240065031A1 patent drawing
  • US20240065031A1 patent drawing
  • US20240065031A1 patent drawing

AI summary

A light emitting display device that includes thin film transistors. Material for electrodes of the thin film transistors are chosen to allow for dehydrogenation of the underlying semiconductor pattern while allowing for high frequency driving without delay. Molybdenum is chosen to allow for dehydrogenation, and titanium on aluminum two-layered structure is chosen for low resistance and high-speed driving. The display includes a driving transistor and a switching transistor with a polycrystalline semiconductor layer and a transistor with an oxide semiconductor layer.