Gate Electrode Segmentation for Semiconductor Integration
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Solution Overview
Problem
The challenge in semiconductor manufacturing is to enhance the integration and reliability of semiconductor devices, particularly in reducing physical dimensions while maintaining performance, which existing methods struggle to achieve effectively with three-dimensional transistor structures.
Innovation Solution
A method involving alternately stacking sacrificial layers and interlayer insulating layers on a substrate, forming channels and separation regions, and creating gate electrodes with a nucleation layer and bulk layers using different reaction gases to improve the semiconductor device's structure and reliability.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If physical dimensions of semiconductor devices are reduced to increase integration, then device integration is improved, but manufacturing precision and reliability deteriorate
Solution Approach 1:
The gate electrode is divided into multiple layers (nucleation layer, first bulk layer, second bulk layer) with different impurity concentrations and resistivities. This segmentation allows each layer to perform specific functions: the nucleation layer provides initial growth substrate, the first bulk layer provides base conductivity, and the second bulk layer provides optimized electrical characteristics, thereby maintaining manufacturing precision even as device dimensions are reduced for higher integration.
Solution Approach 2:
Different regions of the gate electrode structure are assigned different material properties through the multi-layer design. The nucleation layer has specific impurity concentration for nucleation purposes, the first bulk layer has one resistivity value, and the second bulk layer has a different resistivity value. This local differentiation of material properties enables precise control over electrical characteristics while accommodating reduced physical dimensions.
2Productivity
If physical dimensions of semiconductor devices are reduced to increase integration, then device integration is improved, but reliability deteriorates
Solution Approach 1:
The gate electrode is segmented into multiple functional layers that can independently optimize for different requirements. The nucleation layer ensures proper crystal formation, the first bulk layer provides structural stability, and the second bulk layer optimizes electrical performance. This segmentation enhances reliability by distributing functional requirements across multiple layers rather than relying on a single layer, which is critical when device dimensions are reduced.
Solution Approach 2:
The gate electrode employs a composite structure with multiple layers having different material compositions and impurity concentrations. This composite approach combines the advantages of different material properties within a single gate electrode structure, improving reliability by ensuring that each layer contributes specific beneficial properties that compensate for the challenges of reduced device dimensions.
3Ease of manufacture
If gate electrodes are formed with uniform structure, then manufacturing process is simple, but device performance and reliability deteriorate
Solution Approach 1:
The gate electrode is segmented into multiple layers formed through sequential deposition processes. While the overall structure is more complex than a uniform gate electrode, each layer can be formed using standard semiconductor manufacturing techniques, and the segmented structure enables precise control over electrical characteristics, thereby improving device reliability without requiring entirely new manufacturing capabilities.
Solution Approach 2:
The manufacturing process controls key parameters such as impurity concentration and layer thickness for each gate electrode layer. By adjusting these parameters during deposition, the process achieves the desired multi-layer structure with specific electrical properties. This parameter control enables the formation of complex multi-layer gate electrodes using existing manufacturing equipment and processes.
4Ease of manufacture
If gate electrodes are formed with uniform impurity concentration, then manufacturing process is simple, but specific resistivity control and device performance deteriorate
Solution Approach 1:
The gate electrode is segmented into layers with different impurity concentrations, allowing independent optimization of electrical properties for each layer. The nucleation layer has one impurity concentration for proper nucleation, the first bulk layer has a second concentration for base conductivity, and the second bulk layer has a third concentration for optimized resistivity. This segmentation enables precise control over specific resistivity that cannot be achieved with uniform impurity concentration.
Solution Approach 2:
Different regions of the gate electrode are assigned different impurity concentrations to create local variations in electrical properties. The nucleation layer, first bulk layer, and second bulk layer each have tailored impurity concentrations suited to their specific functional requirements. This local quality approach enables precise control over the electrical characteristics of the gate electrode structure.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enables the formation of semiconductor devices with improved reliability and integration by effectively forming gate electrodes with specific resistivity and impurity concentrations, enhancing the device's performance and reducing defects.
Implementation Method 1
forming a nucleation layer in the lateral openings by supplying a source gas and a first reaction gas
Implementation Method 2
forming a bulk layer on the nucleation layer to fill the lateral openings by supplying the source gas and a second reaction gas
Data Source
AI summary
A method of manufacturing a semiconductor device includes alternately stacking sacrificial layers and interlayer insulating layers on a substrate, to form a stack structure; forming channels penetrating through the stack structure; forming separation regions penetrating through the stack structure; forming lateral openings by removing the sacrificial layers through the separation regions; and forming gate electrodes in the lateral openings. Forming the gate electrodes may include forming a nucleation layer in the lateral openings by supplying a source gas and a first reaction gas, and forming a bulk layer on the nucleation layer to fill the lateral openings by supplying the source gas and a second reaction gas, different from the first reaction gas. The first reaction gas may be supplied from a first reaction gas source, stored in a gas charging unit, and supplied from the gas charging unit.