Gate Electrode Structural Stability in Semiconductor Devices
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Solution Overview
Problem
The increasing number of stacked gate electrodes in semiconductor devices poses challenges in maintaining the structural integrity and preventing bending or collapse during the manufacturing process, particularly in forming gate electrodes with sacrificial layers.
Innovation Solution
Incorporating a second support layer on the gate electrode structures and third and fourth division patterns between them to prevent the mold from bending or collapsing, ensuring the stability of gate electrodes on both the cell array and extension regions of the substrate.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If the number of stacked gate electrodes is increased to achieve high capacity data storage, then the storage capacity is improved, but the structural integrity deteriorates and bending or collapse occurs during manufacturing
Solution Approach 1:
The patent divides the gate electrode structure into multiple stacked gate electrodes (first gate electrode, second gate electrode, third gate electrode) separated by insulation pattern structures. This segmentation allows each gate electrode to be independently supported, preventing collective bending or collapse while maintaining high storage capacity through the stacked configuration.
Solution Approach 2:
The patent introduces support layers as intermediary structures between the gate electrodes and the substrate. These support layers extend from the cell array region to the extension region, providing mechanical reinforcement to the gate electrode structures and preventing bending or collapse during the manufacturing process.
2Quantity of substance
If the number of stacked gate electrodes is increased to achieve high capacity data storage, then the storage capacity is improved, but the manufacturing process complexity increases
Solution Approach 1:
The patent forms support layers in advance before stacking the gate electrodes. These pre-formed support layers provide a stable foundation that simplifies subsequent gate electrode formation processes, reducing manufacturing complexity despite the increased number of stacked electrodes.
Solution Approach 2:
The support layers serve multiple functions: they provide mechanical support to prevent bending, act as a foundation for gate electrode formation, and extend into the extension region to reinforce the overall structure. This multi-functionality reduces the need for additional specialized structures, simplifying the manufacturing process.
3Stability of the object's composition
If support layers are added to prevent gate electrode bending, then the structural stability is improved, but the device complexity increases
Solution Approach 1:
The patent merges the support layer formation with the existing manufacturing processes by integrating support layers into the insulating layers or forming them concurrently with other structural elements. This consolidation provides structural stability without adding separate, complex manufacturing steps.
Solution Approach 2:
The support layers are strategically positioned in the extension region and beneath specific gate electrodes where mechanical support is most needed. This localized approach provides structural stability precisely where required without unnecessarily complicating the entire device structure.
Data Source
AI summary
A semiconductor device includes a substrate having cell array and extension regions, a gate electrode structure having gate electrodes stacked in a first direction, a channel through the gate electrode structure on the cell array region, a first division pattern extending in the second direction on the cell array and extension regions, the first division pattern being at opposite sides of the gate electrode structure in a third direction, an insulation pattern structure partially through the gate electrode structure on the extension region, a through via through the insulation pattern structure, and a support layer on the gate electrode structure and extending on the cell array and extension regions, the support layer contacting an upper sidewall of the first division pattern, and the support layer not contacting an upper surface of a portion of the first division pattern on the extension region adjacent to the insulation pattern structure.