Power Semiconductor Gate Electrode for Embedded Die Temperature Sensing
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Solution Overview
Problem
Existing power semiconductor devices, such as IGBTs and MOSFETs, face challenges in accurately monitoring die temperatures due to the difficulty in placing sensors directly on the small free surface of the die, leading to inaccurate temperature measurements and increased costs from additional equipment and processes.
Innovation Solution
A power semiconductor module with a polysilicon material forming one-piece electrodes that include a monitoring portion with variable resistance based on temperature, allowing for embedded temperature sensing without additional space or equipment, using a measurement method that involves triggering a diagnostic mode and converting monitored values into temperature readings.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Measurement precision
If a temperature sensor is placed close to the die, then temperature measurement accuracy is improved, but the difficulty of fixing the sensor increases due to the small free surface area
Solution Approach 1:
The patent merges the temperature sensing function with the existing gate electrode structure by incorporating a polysilicon layer that serves dual purposes: as the gate electrode material and as the temperature-dependent resistance element. This eliminates the need for separate sensor mounting while achieving direct die temperature measurement.
Solution Approach 2:
The polysilicon layer is designed to perform multiple functions simultaneously: it acts as the gate electrode for transistor operation and as the temperature sensing element. This multi-functionality resolves the contradiction by eliminating the need for additional sensor components on the limited die surface.
2Measurement precision
If additional temperature sensors and equipment are added, then temperature monitoring capability is improved, but manufacturing cost and process complexity increase
Solution Approach 1:
The temperature monitoring function is merged into the standard transistor fabrication process by using the same polysilicon deposition and patterning steps to create both the gate electrode and the temperature sensing element. This integration eliminates additional manufacturing equipment and process stages.
Solution Approach 2:
The existing polysilicon gate electrode structure is made multi-functional by designing it to also serve as the temperature sensor. This approach allows temperature monitoring without adding separate sensing equipment or process stages, thereby reducing device complexity.
3Measurement precision
If a separate temperature sensor is used, then temperature measurement is enabled, but additional area on the die surface is required
Solution Approach 1:
The temperature sensing function is merged with the gate electrode structure, allowing temperature measurement without occupying additional die surface area. The same polysilicon layer that forms the gate electrode also provides the temperature-dependent resistance for sensing.
Solution Approach 2:
The gate electrode structure is designed to serve dual purposes: electrical gating function and temperature sensing function. This multi-functionality eliminates the need for separate sensor area on the die surface.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Enables accurate temperature monitoring with minimal additional area on the semiconductor device, compatibility with existing architectures, and reduced costs by integrating thermal sensing directly into the module.
Implementation Method 1
The monitoring portion has a location, a form, a size and a material composition selected together such that to have a variable resistance in function of its temperature during said operational state of the module
Data Source
AI summary
Power semi-conductor module (1) comprising: —at least one IGBT with a Gate G forming a first electrode (11) and an Emitter E forming a second electrode (12), or —at least one MOSFET with a Gate G forming a first electrode (11) and a Source S forming a second electrode (12). The first electrode (11) includes a polysilicon material made in one piece. The one-piece is made partly of a monitoring portion (13). The monitoring portion (13) is in electrical contact with the second electrode (12) such that a leakage current flows between the first electrode (11) and the second electrode (12) in an operational state of the module (1). The monitoring portion (13) has a location, a form, a size and a material composition selected together such that to have a variable resistance in function of its temperature during the operational state of the module (1).