Gate Electrode Structure With Varying Thickness For Semiconductor Devices
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Solution Overview
Problem
As semiconductor devices become more highly integrated, the narrowing of gate regions in MOS transistors leads to challenges in maintaining optimal threshold voltage and pitch between source and drain regions, affecting device performance and efficiency.
Innovation Solution
A semiconductor device design featuring a gate electrode structure with varying thicknesses across different portions, including a substrate with active regions and field insulating films, where the gate electrode structure traverses these regions with specific thickness variations to enhance threshold voltage and pitch control.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If the gate region width is reduced to increase integration, then the integration density is improved, but the threshold voltage control deteriorates
Solution Approach 1:
The gate electrode structure implements varying thicknesses in different regions: a first thickness over the first active region, a second thickness over the second active region, and a third thickness over the field insulating film. This local differentiation allows each region to be optimized independently, maintaining threshold voltage control despite overall gate width reduction for higher integration density.
Solution Approach 2:
The invention transitions from a two-dimensional planar gate structure to a three-dimensional structure with varying thickness in the vertical dimension. By adding the thickness dimension as a control parameter, the patent enables independent optimization of threshold voltage (through thickness variations) while maintaining reduced gate width for high integration, thus resolving the contradiction between integration density and threshold voltage control.
2Productivity
If the gate region width is reduced to increase integration, then the integration density is improved, but the pitch between source and drain regions deteriorates
Solution Approach 1:
The gate electrode structure implements varying thicknesses in different regions: a first thickness over the first active region, a second thickness over the second active region, and a third thickness over the field insulating film. This local differentiation allows each region to be optimized independently, maintaining pitch control despite overall gate width reduction for higher integration density.
Solution Approach 2:
The invention transitions from a two-dimensional planar gate structure to a three-dimensional structure with varying thickness in the vertical dimension. By adding the thickness dimension as a control parameter, the patent enables independent optimization of pitch (through thickness variations) while maintaining reduced gate width for high integration, thus resolving the contradiction between integration density and pitch control.
3Ease of manufacture
If a uniform gate electrode structure is used, then the manufacturing process is simplified, but the threshold voltage optimization deteriorates
Solution Approach 1:
The gate electrode structure implements varying thicknesses in different regions: a first thickness over the first active region, a second thickness over the second active region, and a third thickness over the field insulating film. This local differentiation allows each region to be optimized independently for threshold voltage, while the continuous formation process maintains reasonable manufacturing simplicity despite the increased structural complexity.
Data Source
AI summary
A semiconductor device includes first and second active regions and a field insulating film contacting between the first and second active regions, and a gate electrode structure traversing the first and second active regions and the field insulating film, wherein the gate electrode structure includes a first portion positioned across the first active region and the field insulating film, a second portion positioned across the second active region and the field insulating film, and a third portion contacting the first and second portions. The gate electrode structure includes a gate electrode having an insertion film traversing the first and second active regions and the field insulating film second active region, and a filling film on the insertion film. A thickness of the gate electrode in the third portion is different from a thickness of the gate electrode in the first portion and the second portion.