Display Panel Gate Electrode Transmittance Variation
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Solution Overview
Problem
Existing display panels for organic light emitting display devices face challenges in achieving optimal light sensing ability and reliability due to the limitations of semiconductor devices with uniform gate electrode transmittances, which affect the efficiency of light transmission and reflection.
Innovation Solution
The implementation of display panels with gate electrodes having different transmittances, where one semiconductor device efficiently transmits light and others reflect it, utilizing transparent and opaque conductive materials to enhance light sensing ability and reliability by maintaining uniform threshold voltages.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If gate electrodes with uniform transmittance are used in all semiconductor devices, then manufacturing simplicity is maintained, but light sensing ability and reliability deteriorate
Solution Approach 1:
The patent applies local quality by assigning different transmittance characteristics to gate electrodes based on their specific functional requirements. The first semiconductor device uses a gate electrode with first transmittance optimized for light sensing, while the second and third semiconductor devices use gate electrodes with second transmittance optimized for their respective functions. This localized optimization of transmittance properties resolves the contradiction by improving light sensing ability where needed without unnecessarily complicating the entire device structure.
Solution Approach 2:
The patent implements parameter changes by varying the transmittance parameter of gate electrodes across different semiconductor devices. By adjusting the transmittance parameter to match the functional requirements of each device type, the patent improves overall system reliability and light sensing ability while maintaining a relatively simple manufacturing process that only requires differentiating one key parameter rather than redesigning entire device architectures.
2Reliability
If gate electrodes with different transmittances are used, then light sensing ability is improved, but manufacturing complexity increases
Solution Approach 1:
The patent applies local quality by implementing transmittance differentiation only where functionally necessary - specifically in the gate electrodes of different semiconductor devices based on their roles in the display panel. This localized approach improves light sensing efficiency in the first semiconductor device while limiting manufacturing complexity increases to only the specific components that require different transmittance characteristics, rather than affecting the entire manufacturing process.
Solution Approach 2:
The patent manages manufacturing complexity by changing only the transmittance parameter of gate electrodes rather than fundamentally altering device structures or manufacturing processes. This parameter-based differentiation allows for improved light sensing ability through material selection or thickness adjustment while maintaining compatibility with existing manufacturing methodologies, thus minimizing the increase in manufacturing complexity.
3Illumination intensity
If transparent conductive material is used for gate electrode, then light transmission is enhanced, but photo current generation increases
Solution Approach 1:
The patent applies local quality by using transparent conductive material with high light transmission only in the first semiconductor device where light sensing is the primary function. In the second and third semiconductor devices, the patent uses opaque or less transparent conductive materials that block light and prevent harmful photo current generation. This localized material selection resolves the contradiction by allowing high light transmission where needed while preventing photo current in devices where it would be harmful.
Solution Approach 2:
The patent converts the potential harm of photo current generation into a beneficial design feature by deliberately selecting opaque conductive materials for the second and third semiconductor devices. This material selection transforms what would be a harmful effect (light absorption causing photo current) into a useful function (light blocking to prevent interference), thereby resolving the contradiction between light transmission and photo current generation across the different device types.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach improves light sensing efficiency and reliability by allowing efficient light transmission and reduced photo currents, while maintaining uniform threshold voltages across semiconductor devices.
Implementation Method 1
A first gate electrode of the first semiconductor device may have a first transmittance. A second gate electrode of the second semiconductor device may have a second transmittance substantially different from the first transmittance.
Implementation Method 2
improve characteristics such as a light sensing ability, a reliability, etc.
Data Source
AI summary
A display device includes a substrate and first, second and third thin film transistor. The first thin film transistor is disposed over the substrate, and includes a first gate electrode which has a first transmittance. The second thin film transistor is disposed over the substrate, and includes a second gate electrode which has a second transmittance substantially different from the first transmittance. The third thin film transistor is disposed over the substrate, and includes a third gate electrode which has a third transmittance substantially different from the first transmittance.