Gate Electrode Etching with Passivation for Insulator Protection
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Solution Overview
Problem
The reliability of semiconductor devices is compromised due to damage to the gate insulating layer during the etching process, particularly when processing layers containing titanium nitride (TiN), which affects the integration and performance of semiconductor devices.
Innovation Solution
A method for fabricating semiconductor devices that involves the use of passivation layers with materials having etching selectivity to prevent damage to the gate insulating layer during the etching process, specifically by forming and etching multiple layers with titanium nitride (TiN) while employing passivation layers to protect the gate insulating layers.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If an etching process for layers including titanium nitride (TiN) is performed, then the manufacturing process can proceed, but the gate insulating layer may be damaged which decreases reliability
Solution Approach 1:
A passivation layer is introduced as an intermediary between the etching process and the gate insulating layer. This passivation layer has etching selectivity that allows it to be etched before the gate insulating layer, thereby protecting the gate insulating layer from direct exposure to the etching process while still enabling the necessary manufacturing steps to proceed
Solution Approach 2:
The passivation layer is formed in advance before the etching process on the TiN layer. This preliminary action ensures that the gate insulating layer is protected before the harmful etching process begins, preventing damage while allowing the manufacturing sequence to continue
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enhances the reliability of semiconductor devices by preventing damage to the gate insulating layers during the etching process, thereby improving the integration level and performance of semiconductor devices.
Implementation Method 1
forming a first passivation layer containing a material having an etching selectivity with respect to the first layer on the first layer in the first to fourth regions
Data Source
AI summary
A method for fabricating a semiconductor device includes providing a substrate having first to fourth regions defined thereon. First to fourth active patterns are formed in the first to fourth regions, respectively. Each of the first to fourth active patterns extends in a first horizontal direction. A gate insulating layer is formed on each of the first to fourth active patterns. A first gate electrode is formed in the first region and includes first and fifth layers, a second gate electrode is formed in the second region and includes first, second and fifth layers, a third gate electrode is formed in the third region and includes first, third, fourth and fifth layers and a fourth gate electrode is formed in the fourth region and includes first, second, third, fourth and fifth layers.