Gate Extension Layout in OLED Display Substrates for Lower RC Load

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Solution Overview

Problem

High-resolution OLED displays face challenges with signal line arrangement, leading to increased resistance-capacitance load, signal delay, voltage drop, and non-uniform display quality due to parasitic resistance and capacitance, causing issues like color shift and non-uniform display.

Innovation Solution

The display substrate design includes a base substrate with sub-pixels arranged in a specific configuration, featuring transistors and a storage capacitor, along with auxiliary electrode lines and detection circuits, which reduce resistance and capacitance load by parallel connections and optimized signal line arrangements, thereby improving voltage distribution and display uniformity.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Measurement precision

If signal lines are arranged in conventional configurations for high-resolution OLED displays, then the display resolution is improved, but the resistance-capacitance load increases causing signal delay and voltage drop

Engineering Contradiction:
Improvedisplay resolutionVSAvoidsignal transmission quality
Core Design Contradiction:
Measurement precisionVSReliability

Solution Approach 1:

The gate electrode of the first transistor is segmented into two parts: the main gate electrode and the extension portion. This segmentation allows the extension portion to overlap with the first electrode of the second transistor, creating a parallel connection that reduces the resistance-capacitance load on the signal line. The segmentation enables improved signal transmission quality while maintaining high display resolution.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The extension portion of the gate electrode extends in the second direction (perpendicular to the first direction) to overlap with the first electrode of the second transistor. This dimensional change creates an additional electrical connection path in the vertical dimension, reducing the RC load without affecting the horizontal signal line arrangement required for high-resolution display.

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

2Reliability

If the extension portion overlaps with the first electrode of the second transistor, then the resistance and capacitance load is reduced, but the device structure becomes more complex

Engineering Contradiction:
Improvesignal transmission qualityVSAvoidtransistor structure
Core Design Contradiction:
ReliabilityVSDevice complexity

Solution Approach 1:

The extension portion of the gate electrode serves multiple functions: it maintains the gate control function for the first transistor while simultaneously creating a parallel connection with the first electrode of the second transistor to reduce RC load. This multi-functionality reduces device complexity compared to adding separate structures.

Inventive Principle:
Principle #6Universality (Multi-functionality)

Solution Approach 2:

The extension portion is merged with the gate electrode of the first transistor as a single continuous structure made of the same material. This merging simplifies the manufacturing process and reduces structural complexity compared to implementing separate connection structures.

Inventive Principle:
Principle #5Merging (Combining)

Data Source

PatentUS11937480B2Display substrate having gate extension portion protruding from gate electrode of first transistor and display device
Publication Date: 2024.03.19 HEFEI BOE ZHUOYIN TECH CO LTD
  • US11937480B2 patent drawing
  • US11937480B2 patent drawing
  • US11937480B2 patent drawing

AI summary

A display substrate and a display device are provided. The display substrate includes a base substrate and sub-pixels on the base substrate. At least one sub-pixel includes a first transistor, a second transistor and a storage capacitor. The display substrate further includes an extension portion protruding from the gate electrode of the first transistor, and the extension portion is extended from the gate electrode of the first transistor in the second direction; the extension portion is at least partially overlapped with the first electrode of the second transistor in a direction perpendicular to the base substrate and is electrically connected with the first electrode of the second transistor; in the first direction, the extension portion has a second side closest to the second capacitor electrode, and the second side is recessed in a direction away from the second capacitor electrode.