Gate Insulation Slot for LCD Cracking Prevention
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Solution Overview
Problem
The existing manufacturing process for liquid crystal display (LCD) array substrates faces issues with the cracking of the gate insulation layer during deposition, leading to defects and increased process time, which is not effectively addressed by increasing the thickness of the gate insulation layer.
Innovation Solution
A pixel structure manufacturing method that forms a trench in the photoresist layer with a larger open area proximal to the insulation layer using a back exposure process, allowing for the embedding of a metal layer within the insulation layer without additional patterning processes, thereby reducing the risk of cracking and simplifying the production process.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If the gate insulation layer thickness is increased to prevent cracking, then the reliability of the gate insulation layer is improved, but the process time increases and additional problems may arise in subsequent processes
Solution Approach 1:
The patent applies preliminary action by forming a groove in the gate insulation layer before depositing the gate electrode. This pre-prepared groove structure allows the gate insulation layer to be thinner while still preventing cracking, as the groove provides stress relief and accommodation space for the electrode deposition process
Solution Approach 2:
The patent applies local quality by creating a groove only in specific regions where cracking is most likely to occur during electrode deposition. The groove is positioned at the edges of the gate insulation layer where stress concentration happens, while other regions maintain their original structure, thus providing localized stress relief without compromising overall device performance
2Reliability
If the gate insulation layer thickness is increased to prevent cracking, then the reliability is improved, but the device complexity increases due to additional process risks
Solution Approach 1:
The groove is formed in advance using standard photolithography and etching processes, before the gate electrode deposition. This preliminary preparation eliminates the need for thicker insulation layers and subsequent repair processes, simplifying the overall manufacturing flow while maintaining reliability
Solution Approach 2:
The groove acts as an intermediary structure that mediates between the gate insulation layer and the gate electrode. It provides a controlled interface that accommodates the deposition process, reducing stress transmission and preventing cracking without requiring complex process modifications
3Manufacturing precision
If conventional exposure processes are used to form patterns, then the manufacturing precision is maintained, but the productivity decreases due to additional patterning processes
Solution Approach 1:
The patent merges the groove formation process with the existing photolithography and etching processes used for other pixel structure elements. The same photoresist patterns and etching conditions are used to form both the pixel electrodes and the gate insulation grooves, eliminating the need for separate patterning processes and maintaining manufacturing precision while improving productivity
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method effectively prevents the cracking of the gate insulation layer, reduces the number of patterning processes, and enhances production efficiency, making it suitable for large-scale production with improved yield and cost-effectiveness.
Implementation Method 1
performing an exposure and a development on the photoresist layer by a back exposure process, so as to form a trench in the photoresist layer
Data Source
AI summary
A manufacturing method of the invention, comprising: successively forming an insulation layer and a photoresist layer on a transparent substrate; performing an exposure and a development on the photoresist layer by a back exposure process, so as to form a trench in the photoresist layer, an open area of the trench proximal to the insulation layer is larger than that of the trench distal to the insulation layer; removing a portion of insulation material in a region of the insulation layer exposed through the trench by an etching process, so as to form a slot in the insulation layer; forming a metal layer on a side of the photoresist layer distal to the insulation layer, a portion of the metal layer is embedded in the slot; removing the photoresist layer and the metal layer thereon by a stripping process, and retaining the portion of the metal layer in the slot.