Gate Insulator Layout for Low-Leakage Display Pixel Transistors
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Solution Overview
Problem
Existing display devices face challenges in achieving stable color expression and diverse color ranges due to high leakage currents in switching transistors and limited driving ranges of driving transistors, which are not adequately addressed by current technologies.
Innovation Solution
The display device incorporates a gate insulating layer with varying thickness and hydrogen concentration across different regions to form driving and switching transistors, using silicon oxide and silicon nitride layers to optimize the equivalent oxide thickness and hydrogen distribution, thereby reducing leakage currents and enhancing driving ranges.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a uniform gate insulating layer is used across all transistor regions, then the manufacturing process is simple, but the leakage current of switching transistors cannot be sufficiently reduced and the driving range of driving transistors is limited
Solution Approach 1:
The gate insulating layer is designed with different thicknesses in different regions: a first thickness in the switching transistor region and a second thickness in the driving transistor region. This local differentiation allows the switching transistor to have reduced leakage current due to the thinner gate insulating layer, while the driving transistor maintains a larger driving range due to the thicker gate insulating layer, thereby resolving the technical contradiction between reliability and device complexity.
Solution Approach 2:
The gate insulating layer is segmented into multiple regions with different thicknesses corresponding to different transistor types. The layer is divided into a first region overlapping the switching transistor and a second region overlapping the driving transistor, with each region having optimized thickness for its specific function, thus resolving the contradiction between reducing leakage current and maintaining driving range.
2Reliability
If the gate insulating layer thickness is increased to reduce leakage current, then switching transistor reliability improves, but driving transistor driving range decreases
Solution Approach 1:
Different thicknesses of the gate insulating layer are applied to different transistor regions: a first thickness for the switching transistor to reduce leakage current, and a second thickness for the driving transistor to maintain driving range. This local quality differentiation resolves the contradiction between reliability improvement and adaptability loss.
Solution Approach 2:
The gate insulating layer is segmented into functionally distinct regions with optimized thicknesses. The first region (switching transistor area) has a thickness optimized for low leakage, while the second region (driving transistor area) has a thickness optimized for large driving range, thereby simultaneously achieving both reliability and adaptability goals.
Data Source
AI summary
A display device includes: a substrate; and a plurality of pixel circuits on the substrate comprising: an active layer including a first region and a second region; a gate insulating layer on the active layer, the gate insulating layer including a first insulating layer overlapping the first region and the second region, a second insulating layer on the first insulating layer and overlapping the first region, and a third insulating layer on the second insulating layer and overlapping the first region and the second region; and a first conductive layer on the gate insulating layer, the first conductive layer including a first gate electrode overlapping the first region to form a driving transistor, and a second gate electrode overlapping the second region to form a switching transistor.