Gate Insulator Composition for Flat Panel Displays

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Solution Overview

Problem

Existing gate insulators in flat panel displays, such as liquid crystal displays and organic light-emitting diode displays, face challenges in achieving high transparency, heat resistance, and reliability, while also being patternable, which are crucial for the performance of thin film transistors.

Innovation Solution

A composition is developed that includes a product of a condensation reaction between a thermal cross-linking agent and a hydrolysis and condensation polymerization of a compound with specific functional groups, forming a polyorganosiloxane network structure that can be crosslinked by heat and light, incorporating nanoparticles for enhanced properties, and includes a photo-initiator for improved patterning.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Illumination intensity

If a gate insulator is made with conventional materials to achieve high transparency, then transparency is improved, but heat resistance and reliability deteriorate

Engineering Contradiction:
ImprovetransparencyVSAvoidheat resistance and reliability
Core Design Contradiction:
Illumination intensityVSReliability

Solution Approach 1:

The patent uses a composite material system consisting of polyorganosiloxane base polymer combined with metal acetate crosslinking agents (such as aluminum acetate, zirconium acetate, or magnesium acetate). This composite approach allows the gate insulator to simultaneously achieve high transparency from the polyorganosiloxane matrix and improved heat resistance and reliability from the metal acetate crosslinked network structure.

Inventive Principle:
Principle #40Composite materials

Solution Approach 2:

The patent changes the chemical and physical parameters of the gate insulator material by introducing crosslinking functionality through metal acetate compounds. The crosslinking degree and network density are controlled by adjusting the amount and type of metal acetate additive, thereby optimizing the balance between transparency, heat resistance, and reliability parameters.

Inventive Principle:
Principle #35Parameter changes

2Temperature

If a gate insulator material is selected for high heat resistance, then heat resistance is improved, but transparency and patternability worsen

Engineering Contradiction:
Improveheat resistanceVSAvoidtransparency
Core Design Contradiction:
TemperatureVSIllumination intensity

Solution Approach 1:

The patent employs a composite material system where polyorganosiloxane provides the transparent matrix and metal acetate crosslinking agents provide the heat-resistant network structure. This composite approach allows simultaneous achievement of high transparency and heat resistance, overcoming the trade-off between these two properties in conventional single-material systems.

Inventive Principle:
Principle #40Composite materials

Solution Approach 2:

The patent optimizes the transparency-heat resistance balance by controlling the crosslinking parameters through selective use of metal acetate compounds. The molecular weight, crosslinking density, and network structure are adjusted by varying the metal acetate content and type, thereby achieving high heat resistance while maintaining excellent transparency.

Inventive Principle:
Principle #35Parameter changes

3Reliability

If a gate insulator is designed for high reliability, then reliability is improved, but ease of patterning and manufacturing deteriorates

Engineering Contradiction:
ImprovereliabilityVSAvoidpatterning ease
Core Design Contradiction:
ReliabilityVSEase of manufacture

Solution Approach 1:

The patent changes the material parameters to enable both high reliability and easy patterning by using photopolymerizable polyorganosiloxane compounds combined with metal acetate crosslinking agents. The photopolymerization capability allows for precise optical patterning, while the metal acetate crosslinked network ensures high reliability and stability of the gate insulator.

Inventive Principle:
Principle #35Parameter changes

Solution Approach 2:

The patent replaces conventional thermal curing or chemical vapor deposition processes with photopolymerization-based patterning. This substitution enables direct optical patterning of the gate insulator layer, significantly improving manufacturing ease and precision while maintaining high reliability through the crosslinked network structure formed by metal acetate compounds.

Inventive Principle:
Principle #28Mechanics substitution (Replace mechanical system)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The composition provides a gate insulator with high transparency, heat resistance, and reliability, reducing leakage current and improving the performance of thin film transistors by forming a dense network structure and allowing for efficient pattern formation.

Implementation Method 1

a product of a condensation reaction between a thermal cross-linking agent and a product of hydrolysis and condensation polymerization of a compound represented by Chemical Formula 1

Methodology Applied
Scientific EffectCondensation reaction:

Implementation Method 2

a product of hydrolysis and condensation polymerization of a compound represented by Chemical Formula 1

Methodology Applied
Scientific EffectHydrolysis: Hydrolysis

Implementation Method 3

the composition may further include at least one selected from a group consisting of a photo-initiator, a photo acid generator

Methodology Applied
Scientific EffectPhotopolymerization: Photopolymerisation

Data Source

PatentUS10879475B2Composition, electronic device, and thin film transistor
Publication Date: 2020.12.29 SAMSUNG ELECTRONICS CO LTD
  • US10879475B2 patent drawing
  • US10879475B2 patent drawing
  • US10879475B2 patent drawing

AI summary

A composition includes a product of a condensation reaction between a thermal cross-linking agent and a product of hydrolysis and condensation polymerization of a compound represented by Chemical Formula 1.