Gate Isolation Structure for Dense Semiconductor Gate Separation
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Solution Overview
Problem
As semiconductor devices are scaled down to increase degrees of integration, the challenge lies in effectively electrically separating gate structures while maintaining high integration levels and efficient electrical characteristics.
Innovation Solution
A semiconductor device with a separation structure that includes a first separation structure and a second separation structure, where the second separation structure penetrates through the first separation structure, is used to electrically separate gate structures, allowing for increased integration and improved electrical characteristics.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If gate structures are scaled down to increase integration density, then the degree of integration is improved, but electrical separation between adjacent gate structures becomes insufficient
Solution Approach 1:
The patent implements a nested separation structure where a first separation structure and a second separation structure are positioned at different vertical levels, with the second structure extending into the first. This nested configuration provides multi-level electrical isolation between adjacent gate structures, ensuring reliable separation even as devices are scaled down to increase integration density.
Solution Approach 2:
The patent transitions from single-level planar separation to multi-level three-dimensional separation by introducing separation structures at different vertical heights. The first separation structure is positioned at a lower level while the second separation structure extends upward into the first structure, creating vertical dimensional separation that enhances electrical isolation without consuming additional lateral space.
2Reliability
If separation structures are added to ensure electrical separation, then electrical separation is improved, but device complexity increases
Solution Approach 1:
The patent divides the separation function into multiple segmented components: a first separation structure and a second separation structure positioned at different vertical levels. Each structure performs the separation function independently, and their combined effect provides enhanced electrical isolation. This segmentation allows the complex separation requirement to be achieved through simpler, modular structures.
Solution Approach 2:
The separation structures serve multiple functions simultaneously: they provide electrical isolation between adjacent gate structures, act as isolation regions during fabrication processes, and define the boundaries of active regions. This multi-functionality reduces the need for additional dedicated structures, thereby limiting the increase in overall device complexity.
Data Source
Figure 1
Figure 2A~2B
Figure 2C
AI summary
A semiconductor device includes active regions, including a first active region (a on the left) and a second active region (b on the right), extending in a first horizontal direction, an isolation region (107b) defining the active regions, a gate structure (165a, 165b) disposed on the isolation region and extending in a second horizontal direction to intersect the active region, and gate isolation structures (170, 180) penetrating through the gate structure (165a, 165b) and disposed on the isolation region (107b) between the first active region and the second active region. The gate isolation structures include a first dielectric separation structure (170) extending into the isolation region (107b), and a second dielectric separation structure (180) disposed on the first dielectric separation structure (170) and penetrating through at least a portion of the first dielectric separation structure (170), and a width of a lower region of the second dielectric separation structure (180) in the second horizontal direction is less than a width of an upper region of the first dielectric separation structure (170) in the second horizontal direction.