Gate Interfacial Layer Activation for Low-Temperature Dipole Doping
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Solution Overview
Problem
Conventional methods for forming a dipole interface in semiconductor devices, particularly in three-dimensional transistor structures, are complex and require high-temperature heat treatments, which are difficult to implement and can damage the interfacial layer, and direct doping methods are not applicable to such structures.
Innovation Solution
A method involving hydrogen plasma treatment to activate the interfacial layer surface, followed by adsorption and bonding of dipole-forming atoms like lanthanum or aluminum, without the need for high-temperature processes or capping layers, using an apparatus with controlled plasma generation and gas supply.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If high-temperature heat treatment is performed to form a dipole interface, then dipole formation is achieved, but the thermal budget increases and the interfacial layer may be damaged
Solution Approach 1:
The patent changes the temperature parameter from high-temperature heat treatment to low-temperature plasma processing. By using hydrogen plasma to activate the interfacial layer surface and then introducing dipole-forming atoms through plasma-enhanced chemical vapor deposition, the process achieves dipole interface formation without requiring high-temperature treatment, thus reducing the thermal budget while maintaining reliability
Solution Approach 2:
The patent replaces the thermal mechanism (heat treatment) with a plasma-based chemical mechanism. Instead of using thermal energy to activate the interfacial layer and promote diffusion, the invention uses hydrogen plasma to create surface activation and dangling bonds, followed by chemical bonding of dipole-forming atoms, thereby substituting a thermal process with a plasma chemical process
2Reliability
If a capping layer is formed and removed to facilitate dipole formation, then dipole interface is created, but the process complexity increases
Solution Approach 1:
The patent extracts and eliminates the capping layer from the process flow. By directly activating the interfacial layer surface with hydrogen plasma and subsequently introducing dipole-forming atoms through plasma processing, the invention removes the need for capping layer formation and removal steps, thereby reducing process complexity while achieving the same dipole interface formation objective
Solution Approach 2:
The patent performs preliminary activation of the interfacial layer surface using hydrogen plasma before introducing dipole-forming atoms. This preliminary action creates surface activation and dangling bonds that facilitate direct bonding of dipole-forming atoms, eliminating the need for subsequent capping layer removal and simplifying the overall process sequence
3Ease of manufacture
If direct doping is used to form dipole interface, then doping is simplified, but it is not applicable to three-dimensional transistor structures
Solution Approach 1:
The patent applies local quality by selectively activating only the interfacial layer surface with hydrogen plasma and introducing dipole-forming atoms specifically at the interface region. This localized approach allows the process to work effectively in three-dimensional transistor structures where only specific regions need modification, making the method adaptable to complex 3D geometries while maintaining ease of manufacture
Solution Approach 2:
The patent introduces hydrogen plasma as an intermediary that activates the interfacial layer surface and facilitates the bonding of dipole-forming atoms. This intermediary mechanism enables controlled dipole formation in three-dimensional structures by mediating the interaction between the interfacial layer and dipole-forming atoms, making the process applicable to complex geometries while maintaining manufacturing simplicity
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Facilitates the formation of a dipole interface in the gate insulating layer of three-dimensional transistors with minimal process complexity and damage, enabling efficient doping without high-temperature treatments.
Implementation Method 1
a method involving hydrogen plasma treatment to activate the interfacial layer surface
Implementation Method 2
interfacial layer surface activation step for activating a surface of the interfacial layer by treating the semiconductor structure with hydrogen plasma
Implementation Method 3
followed by adsorption and bonding of dipole-forming atoms like lanthanum or aluminum
Implementation Method 4
bonding a dipole-forming atom to the activated surface of the interfacial layer
Data Source
AI summary
Proposed is a method for fabricating a semiconductor device. The method includes a semiconductor structure provision step of providing a semiconductor structure including one or more channel layers each having an interfacial layer formed on a surface thereof, an interfacial layer surface activation step for activating a surface of the interfacial layer by treating the semiconductor structure with hydrogen plasma, and a dipole doping step for bonding a dipole-forming atom to the activated surface of the interfacial layer. According to the method, a dipole interface can be formed in a gate insulating layer through a simple process by doping dipole-forming atoms after activating the interfacial layer surface by hydrogen plasma treatment.