Gate Line Layout for Plasma-Protected Compact Semiconductor Cells
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Solution Overview
Problem
The existing semiconductor devices face challenges in reducing size and improving performance due to the need for additional space and reduced flexibility in metal wiring arrangements caused by the inclusion of antenna devices, which are used to protect transistors from plasma damage during manufacturing.
Innovation Solution
The semiconductor device design eliminates the need for an antenna device by utilizing empty space to increase the channel region, allowing for a higher ratio of metal wiring area to channel region area, thereby reducing the device size and enhancing metal wiring flexibility without compromising protection from plasma damage.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If an antenna device is added to protect the transistor from plasma damage, then the reliability is improved, but the area of the semiconductor device increases
Solution Approach 1:
The patent merges the antenna device functionality with the gate line structure by forming the gate line to extend over the channel region, thereby integrating the plasma protection function into the existing gate structure rather than adding a separate antenna device. This combining approach maintains reliability while reducing the overall device area.
Solution Approach 2:
The gate line is designed to serve dual functions: as the control electrode for the transistor and as the antenna device for plasma damage protection. By making the gate line perform multiple functions, the patent eliminates the need for a separate antenna device structure, thereby reducing device area while maintaining protection capability.
2Reliability
If an antenna device is added to protect the transistor from plasma damage, then the reliability is improved, but the flexibility of metal wiring arrangement decreases
Solution Approach 1:
The patent combines the antenna device function with the gate line, allowing metal wirings to be directly connected to the gate line without being constrained by the need for separate antenna device connections. This integration provides greater freedom in metal wiring arrangement while maintaining plasma protection.
Solution Approach 2:
The patent extracts the antenna device functionality from a separate component and integrates it into the gate line structure. This extraction eliminates the additional space and connection constraints that a separate antenna device would impose, thereby increasing metal wiring flexibility.
3Productivity
If the channel region is increased by utilizing empty space, then the productivity is improved, but the area of the semiconductor device increases
Solution Approach 1:
The patent extends the gate line in the first direction beyond the active region to create an extended gate structure. This dimensional extension allows the channel region to be increased without expanding the device area in the second direction, effectively utilizing the empty space above the substrate in the first direction to improve productivity.
Solution Approach 2:
The patent creates a flexible gate line structure that can be extended or adjusted in length along the first direction. This dynamic configuration allows optimization of the channel region size for improved operation speed while maintaining compact device footprint by adjusting the gate line extension rather than expanding the overall device area.
Data Source
AI summary
A semiconductor device includes a gate line extending in a first direction, parallel to an upper surface of a semiconductor substrate; a first active region including a first channel region disposed below the gate line and including a first conductivity-type impurity; a second active region disposed to be separated from the first active region in the first direction, including a second channel region disposed below the gate line, and including the first conductivity-type impurity; and a plurality of metal wirings disposed at a first height level above the semiconductor substrate, wherein at least one metal wiring, among the plurality of metal wirings, is directly electrically connected to the first active region, no metal wirings at the first height level are electrically connected to the second active region, and at least one metal wiring, among the plurality of metal wirings, is connected to receive a signal applied to the gate line.