Fin-Type Gate Line Segmentation for Parasitic Capacitance Reduction
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Solution Overview
Problem
As integrated circuit devices are downscaled, there is a need to reduce undesired parasitic capacitance to enhance operation accuracy and speed, while also improving reliability.
Innovation Solution
The integrated circuit device incorporates a fin-type active region and a gate line with a connection protrusion portion and a main gate portion, where the main gate portion has a recess top surface at a lower vertical level than the connection protrusion portion, reducing the area occupied by conductive regions and thereby minimizing parasitic capacitance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Object-generated harmful factors
If the area occupied by conductive regions is decreased through down-scaling, then parasitic capacitance is reduced, but manufacturing precision requirements increase
Solution Approach 1:
The gate line is segmented into a connection protrusion portion and a main gate portion with different vertical levels. The connection protrusion portion extends upward from the substrate surface, while the main gate portion is recessed below this level. This segmentation allows the gate line to occupy less planar area while maintaining electrical connectivity, thereby reducing parasitic capacitance without compromising manufacturing feasibility through standardized multi-level deposition processes.
Solution Approach 2:
The gate line structure transitions from a two-dimensional planar configuration to a three-dimensional multi-level structure. By utilizing vertical dimensionality with the connection protrusion portion at a first vertical level and the main gate portion at a second vertical level (lower than the first), the design reduces the footprint area occupied by conductive regions, directly decreasing parasitic capacitance while maintaining functional integrity.
2Speed
If the area occupied by conductive regions is decreased, then operation speed is improved, but device complexity increases
Solution Approach 1:
The gate line is divided into functionally distinct segments: a connection protrusion portion for electrical connectivity and a main gate portion for transistor gating functionality. This segmentation enables optimized positioning of conductive regions to minimize parasitic capacitance, thereby improving operation speed while the modular structure actually simplifies the overall device architecture.
Solution Approach 2:
By transitioning to a three-dimensional multi-level gate line structure, the design achieves faster operation speeds through reduced parasitic capacitance without increasing planar device complexity. The vertical stacking of connection and main gate portions utilizes the third dimension to achieve performance improvements without expanding the device footprint.
3Reliability
If the area occupied by conductive regions is decreased, then reliability is enhanced, but ease of manufacture decreases
Solution Approach 1:
The gate line is segmented into a connection protrusion portion and a main gate portion, allowing each segment to be optimized for its specific function. The connection protrusion portion ensures reliable electrical connectivity, while the main gate portion maintains proper transistor control. This segmentation improves reliability without significantly complicating manufacturing, as each segment can be formed using standard semiconductor fabrication techniques.
Solution Approach 2:
The multi-level gate line structure utilizes vertical dimensionality to reduce planar area and minimize parasitic capacitance, thereby enhancing device reliability. The connection protrusion portion at the first vertical level and the main gate portion at the lower second vertical level are formed using conventional deposition and etching processes, maintaining ease of manufacture while achieving improved reliability through reduced conductive region area.
Data Source
AI summary
An integrated circuit device includes a fin-type active region disposed on a substrate and extending in a first horizontal direction, a gate line disposed on the fin-type active region and extending in a second horizontal direction intersecting the first horizontal direction, the gate line including, a connection protrusion portion including a protrusion top surface at a first vertical level from the substrate, and a main gate portion including a recess top surface extending in the second horizontal direction from the connection protrusion portion, the recess top surface being at a second vertical level lower than the first vertical level, a gate contact disposed on the gate line and connected to the connection protrusion portion, a source/drain region disposed on the fin-type active region and disposed adjacent to the gate line, and a source/drain contact disposed on the source/drain region.