Gate Oxide Integrity Capacitor Layout for Contamination Detection
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Solution Overview
Problem
Current methods for evaluating gate oxide integrity (GOI) in semiconductor devices are inadequate in detecting contamination, as they are not sensitive enough to detect low levels of contaminants that can cause premature failures, and existing GOI testing structures are influenced by surrounding structures, leading to inaccurate results.
Innovation Solution
A semiconductor device with a detection structure featuring a deep trench isolation oxide and a smaller capacitor surrounded by a larger p-type doped region, which collects contaminants effectively and allows for parametric testing to determine gate oxide integrity by reaching critical contamination density quickly.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional GOI testing structures with large gate oxide area are used, then the probability of catching defects is improved, but the sensitivity to contamination is reduced because contaminates are averaged out across the large area
Solution Approach 1:
The invention segments the detection structure into two distinct regions: a large first doped region that collects contaminants from surrounding areas, and a smaller second doped region with gate oxide that serves as the sensitive detection element. This segmentation allows the system to benefit from both large collection area and small sensitive area, resolving the contradiction between defect detection probability and contamination sensitivity.
2Reliability
If large gate oxide area is used in testing structure, then more defects can be detected, but surrounding structures influence the testing results leading to inaccurate measurements
Solution Approach 1:
The invention extracts the sensitive detection function from the contaminant collection function by creating a separate small second doped region with gate oxide that is surrounded by the larger first doped region. This extraction allows the small detection region to be isolated from surrounding structures that would otherwise influence testing results, while still benefiting from the large collection area of the first region.
3Ease of manufacture
If standard detection methods are used, then manufacturing process is simple, but contamination detection sensitivity is insufficient to detect low levels of contaminants
Solution Approach 1:
The invention applies local quality by creating a specific structural configuration where the second doped region with gate oxide has different dimensions and properties than the surrounding first doped region. The small size and specific doping characteristics of the second region provide enhanced local sensitivity to contamination, while the overall structure remains compatible with standard manufacturing processes.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The proposed method provides sensitive and efficient detection of contamination, enabling timely feedback and reducing yield loss by identifying contamination severity through parametric testing, thereby improving the reliability of semiconductor devices.
Implementation Method 1
During the manufacturing of semiconductor devices, contaminates 101 diffuse through substrate 105 and collect at the bottom side of the silicon substrate 102
Implementation Method 2
forming a dielectric layer on the second doped region
Data Source
AI summary
A method of forming an integrated circuit on a substrate is described herein. The method includes forming a first doped region of a detection structure on the substrate, the first doped region comprises a first doped conductivity type. The method forming a capacitor of the detection structure, which includes forming a second doped region of a second conductivity type opposite the first doped conductivity type, the second doped region surrounded by the first doped region. The second doped well comprises a top surface area smaller than a top surface area of the first doped region. The method includes performing parametric testing on the capacitor over a plurality of breakdown voltages. The method includes determining the gate oxide integrity of the capacitor based on the parametric testing over the plurality of breakdown voltages.