Semiconductor Gate Oxide Thickness Matching for Multi-Voltage Transistors
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Solution Overview
Problem
Current high voltage transistor manufacturing methods face challenges in achieving optimal performance due to mismatches between operating voltage and oxide layer thickness, leading to reduced performance and increased costs when producing transistors with different voltage requirements on the same substrate.
Innovation Solution
The method involves forming grooves of different depths on a substrate to create oxide layers of varying thicknesses for high voltage transistors, allowing for the adjustment of oxide layer thickness based on operating voltage and enabling the simultaneous fabrication of multiple high voltage transistors with different specifications on the same substrate, while being compatible with existing processes and cost-effective.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If a single oxide layer thickness is used for all high voltage transistors on the substrate, then the manufacturing process is simplified, but the performance of transistors with different voltage requirements deteriorates due to voltage-thickness mismatch
Solution Approach 1:
The patent applies local quality by forming oxide layers with different thicknesses in different regions of the substrate. Specifically, a first oxide layer with a first thickness is formed in a first region, and a second oxide layer with a second thickness is formed in a second region. This allows each region to have optimized oxide thickness tailored to the specific voltage requirements of transistors in that region, thereby improving transistor performance without significantly complicating the overall manufacturing process.
2Reliability
If multiple oxide layers with different thicknesses are formed on the same substrate, then the performance of high voltage transistors with different voltage requirements is improved, but the manufacturing process complexity increases
Solution Approach 1:
The patent applies segmentation by dividing the substrate into multiple regions (first region and second region) and forming oxide layers with different thicknesses in each region. This segmentation allows the manufacturing process to handle different voltage requirements separately in different regions, improving transistor performance while managing process complexity through systematic regional differentiation.
Solution Approach 2:
The patent applies parameter changes by varying the oxide layer thickness parameter across different regions of the substrate. A first oxide layer with a first thickness is formed in the first region, and a second oxide layer with a second thickness is formed in the second region. This parameter variation enables optimization of transistor performance for different voltage requirements without requiring fundamentally different manufacturing approaches.
3Ease of manufacture
If oxide layer thickness is not matched to operating voltage, then the manufacturing process is simpler, but transistor performance deteriorates due to voltage-thickness mismatch
Solution Approach 1:
The patent applies local quality by forming oxide layers with different thicknesses in different regions of the substrate. Specifically, a first oxide layer with a first thickness is formed in a first region, and a second oxide layer with a second thickness is formed in a second region. This allows each region to have optimized oxide thickness tailored to the specific voltage requirements of transistors in that region, thereby improving transistor performance without significantly complicating the overall manufacturing process.
Data Source
AI summary
The invention provides a method for forming a semiconductor structure, which comprises providing a substrate, sequentially a first groove and a second groove are formed in the substrate, the depth of the first groove is different from the depth of the second groove, a first oxide layer is formed in the first groove, a second oxide layer is formed in the second groove, an etching step is performed to remove part of the first oxide layer, a first gate structure is formed on the first oxide layer, and a second gate structure is formed on the second oxide layer.