Gate Oxide Formation Using Nitridation for Thickness Uniformity

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Solution Overview

Problem

In semiconductor devices, variations in gate oxide layer thickness across doped areas can affect electrical parameters and properties, leading to inconsistencies in device performance.

Innovation Solution

A method involving nitridation treatment followed by oxidation treatment is applied to both doped areas to form gate oxide layers, using nitrogen ions to control the growth rate and reduce thickness differences, thereby stabilizing electrical properties.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Manufacturing precision

If conventional oxidation process is used on different doped areas, then gate oxide layers are formed, but thickness differences occur between gate oxide layers on different doped areas

Engineering Contradiction:

Improvegate oxide thickness uniformityVSAvoidelectrical parameter consistency

Core Design Contradiction:

Manufacturing precisionVSReliability

Solution Approach 1:

The patent applies nitridation treatment to the doped substrate before performing oxidation treatment. This preliminary action modifies the substrate surface properties, creating a nitrogen-containing layer that controls and uniformizes the subsequent oxidation rate across different doped areas, thereby preventing thickness variations in the gate oxide layer

Inventive Principle:

Principle #10Preliminary action

Solution Approach 2:

The patent changes the chemical composition parameter of the substrate surface by introducing nitrogen through nitridation treatment. This parameter change (adding nitrogen) modifies the oxidation characteristics of different doped areas, making their oxidation rates more consistent and resulting in uniform gate oxide thickness

Inventive Principle:

Principle #35Parameter changes

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This approach ensures uniform gate oxide thickness, improving the consistency of electrical parameters such as threshold voltage and capacitance, and simplifies the process flow for semiconductor device fabrication.

Implementation Method 1

Nitridation treatment is performed on the first doped area and the second doped area

Methodology Applied

Scientific EffectNitridation: Nitriding

Implementation Method 2

Oxidation treatment is performed on the first doped area and the second doped area subjected to the nitridation treatment, to form a first gate oxide layer and a second gate oxide layer respectively

Methodology Applied

Scientific EffectOxidation: Oxidation

Data Source

PatentUS11862461B2Method of forming oxide layer on a doped substrate using nitridation and oxidation process

Publication Date: 2024.01.02 CHANGXIN MEMORY TECH INC

AI summary

A semiconductor structure and a method for forming a semiconductor structure are provided. The method includes: a base is provided, in which the base includes a first doped area and a second doped area, and an isolation structure is provided between the first doped area and the second doped area; nitridation treatment is performed on the first doped area and the second doped area; and oxidation treatment is performed on the first doped area and the second doped area subjected to the nitridation treatment, to form a first gate oxide layer and a second gate oxide layer respectively.