Gate Pad Layout Patterns for Standard Cell Area Optimization

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Solution Overview

Problem

The design of modern integrated circuits faces challenges in minimizing area and power consumption due to the fixed dimensions of standard cells, which are not optimized for varying transistor power requirements.

Innovation Solution

The use of vertical gate-all-around (VGAA) transistors with varying gate pad widths and pitches allows for a more efficient layout, reducing area and power consumption by configuring transistors with smaller gate pads for less powerful transistors, thereby optimizing the layout of standard cells.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Ease of manufacture

If standard cells use fixed dimensions for all transistors, then manufacturing and design are simplified, but area and power consumption cannot be optimized for varying transistor power requirements

Engineering Contradiction:
Improvestandard cell design simplicityVSAvoidpower consumption
Core Design Contradiction:
Ease of manufactureVSUse of energy by moving object

Solution Approach 1:

The patent divides the standard cell layout into multiple columns with different gate pad pitches. Transistors in different columns have different gate pad dimensions, allowing the circuit to use smaller gate pads for less powerful transistors and larger gate pads for more powerful transistors, thereby optimizing power consumption while maintaining manufacturing simplicity through standardized column-based design

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The patent applies different gate pad pitches and widths to different locations within the standard cell. Specifically, transistors requiring less power are assigned to columns with smaller gate pad pitches, while transistors requiring more power are assigned to columns with larger gate pad pitches, enabling localized optimization of power consumption based on specific transistor requirements

Inventive Principle:
Principle #3Local quality

2Device complexity

If standard cells use fixed dimensions for all transistors, then layout design is simplified, but area occupation increases due to inability to optimize for varying power requirements

Engineering Contradiction:
Improvelayout design complexityVSAvoidstandard cell area
Core Design Contradiction:
Device complexityVSArea of stationary object

Solution Approach 1:

The patent segments the standard cell into multiple columns, each with a specific gate pad pitch. This segmentation allows transistors to be placed in appropriate columns based on their power requirements, enabling area optimization without significantly increasing layout design complexity since the column structure provides a systematic framework for placement

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The patent changes the gate pad pitch parameter across different columns within the standard cell. By varying this geometric parameter, the layout can accommodate transistors with different power requirements more efficiently, reducing overall area occupation while maintaining manageable design complexity through parameter variation rather than complete layout redesign

Inventive Principle:
Principle #35Parameter changes

Data Source

PatentUS10007750B2Gate pad layout patterns for masks and structures
Publication Date: 2018.06.26 TAIWAN SEMICONDUCTOR MANUFACTURING CO LTD
  • US10007750B2 patent drawing
  • US10007750B2 patent drawing
  • US10007750B2 patent drawing

AI summary

A layout design of a standard cell for a set of masks includes a first gate pad layout pattern, a second gate pad layout pattern immediately adjacent to the first gate pad layout pattern, and a third gate pad layout pattern immediately adjacent to the second gate pad layout pattern. Each gate pad layout pattern has first and second sides extending along a first direction, the second side further along a second direction than the first side. A first gate pad pitch is a distance between first sides of the first and second gate pad layout patterns and has a value different from that of a second gate pad pitch that is a distance between first sides of the second and third gate pad layout patterns. Each gate pad pattern is usable for forming a gate pad surrounding a set of channel structures.