Semiconductor Gate-Resistor Co-Fabrication Using Two-Step Etching
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Solution Overview
Problem
Conventional semiconductor manufacturing processes require separate steps for forming gate and resistor structures, leading to complexity and reduced production efficiency.
Innovation Solution
A method involving two etching processes to simultaneously form gate and resistor structures, using a stacked material layer with specific conductive and dielectric layers, allowing compatibility between the processes.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If separate processes are used to form gate structure and resistor structure, then each structure can be formed with dedicated optimization, but the overall manufacturing process becomes complex and less efficient
Solution Approach 1:
The patent combines the formation of gate structure and resistor structure into a single integrated process. A stacked material layer containing both gate material and resistor material is formed simultaneously, and a single etching process selectively removes portions of this stacked layer to create both structures. This merging eliminates the need for separate formation processes, reducing overall process complexity while maintaining the precision needed for both structures.
Solution Approach 2:
The stacked material layer is segmented into different functional regions with distinct materials - gate material in the first area and resistor material in the second area. This segmentation allows each material to be optimized for its specific function while being part of a unified structure, enabling precise control over the properties of each component during the single formation process.
2Manufacturing precision
If separate processes are used to form gate structure and resistor structure, then each structure can be independently optimized, but production efficiency decreases due to multiple process steps
Solution Approach 1:
The patent merges the formation of gate and resistor structures into one simultaneous process using a stacked material layer. This eliminates sequential processing steps, directly improving production efficiency by reducing the total number of process cycles required, while still allowing independent optimization of each structure through material segmentation.
Solution Approach 2:
The stacked material layer is prepared in advance with pre-positioned gate material and resistor material in their respective areas. This preliminary arrangement of materials before the etching process allows both structures to be formed efficiently in a single step, avoiding the need for multiple separate deposition and patterning operations.
3Device complexity
If a single etching process is used to form both gate and resistor structures, then process complexity is reduced, but selective removal of different materials becomes challenging
Solution Approach 1:
The patent applies local quality by using different materials with distinct etching characteristics in different spatial locations. The gate area uses gate material with specific etching properties, while the resistor area uses resistor material with different etching properties. This allows a single etching process to selectively remove materials based on their local properties, achieving precise selective removal without requiring multiple etching processes.
Solution Approach 2:
The patent exploits parameter changes in material properties - specifically, the different etching rates or selectivity of gate material versus resistor material. By selecting materials with sufficiently different etching parameters, a single etching process can selectively remove one material while preserving the other, achieving the desired selective removal with high precision.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Simplifies the manufacturing process, enhances production efficiency, and results in stable resistor structures with consistent resistance values and reduced temperature dependence, while minimizing coupling capacitance.
Implementation Method 1
A first etching process is performed on the stacked material layer to remove the second conductive layer that is located on two end portions of the first area and a middle portion of the second area
Implementation Method 2
A second etching process is performed on the stacked material layer to remain the first conductive layer located under the second gate layer and the resistor contact and the first conductive layer located on the middle portion of the second area
Data Source
AI summary
A method for manufacturing a semiconductor device and a semiconductor device are provided. The method includes: providing a substrate including a first area and a second area; forming a stacked material layer on the substrate, where the stacked material layer includes a first dielectric layer, a first conductive layer, and a second conductive layer; performing a first etching process on the stacked material layer to remove the second conductive layer that is located on two end portions of the first area and a middle portion of the second area, so as to form a second gate layer and a resistor contact; and performing a second etching process on the stacked material layer to remain the first conductive layer located under the second gate layer and the resistor contact and the first conductive layer located on the middle portion of the second area.