Transistor Gate Runner Resistor Integration
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Solution Overview
Problem
Existing insulated gate power transistor devices face challenges in implementing a resistor between the gate node and gate-source capacitance in a space-saving manner with exactly predefined resistance, affecting switching speed and reliability.
Innovation Solution
The design incorporates a gate runner with a first and second metal line section, where the second section forms a resistor by having a cross-sectional area less than 50% of the first section, allowing for precise resistance adjustment between the gate pad and the gate runner, utilizing materials like tungsten and aluminum-copper alloy to achieve desired resistivity.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If a resistor is implemented between the gate node and gate-source capacitance using conventional methods, then the resistance can be adjusted to control switching speed, but the device occupies excessive space and the resistance value cannot be precisely predefined
Solution Approach 1:
The patent merges the resistor function with the gate runner structure by making the gate runner itself serve as the resistive element. The gate runner comprises multiple metal line sections with different cross-sectional areas, where the second metal line section has a reduced cross-sectional area (less than 50% of the first section) to provide the desired resistance value. This integration eliminates the need for a separate discrete resistor component, achieving precise resistance control while minimizing device area.
Solution Approach 2:
The patent applies local quality by creating a non-uniform gate runner structure where different sections have different cross-sectional areas. The first metal line section has a larger cross-sectional area for low resistance, while the second metal line section has a reduced cross-sectional area (less than 50% of the first section) to provide higher resistance. This local variation in geometric properties enables precise resistance control within a compact structure.
2Manufacturing precision
If the gate runner cross-sectional area is reduced to increase resistance, then the resistance value can be precisely controlled, but the gate runner becomes more susceptible to manufacturing variations and reliability issues
Solution Approach 1:
The patent segments the gate runner into multiple distinct metal line sections (first metal line section and second metal line section) with different cross-sectional areas. The first section has a larger cross-sectional area for low resistance and high reliability, while the second section has a reduced cross-sectional area (less than 50% of the first section) for precise resistance control. This segmentation allows the design to achieve precise resistance values while maintaining reliability through the robust first section.
Solution Approach 2:
The patent employs composite material structure by combining metal line sections with different geometric properties within the same gate runner. The first metal line section and second metal line section are made of conductive material but have different cross-sectional areas, creating a composite structure that provides both high reliability (through the larger first section) and precise resistance control (through the smaller second section).
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration enables efficient resistance control, ensuring consistent switching speeds and improved reliability by balancing gate resistances across multiple transistor cells, thereby enhancing the overall performance of the transistor device.
Implementation Method 1
a cross sectional area of the second metal line in the at least one second gate runner section is less than 50% of the cross sectional area of the second metal line in the first gate runner section... the at least one second gate runner section forms a resistor
Data Source
Figure 1~2C
Figure 3A~5
Figure 6
AI summary
Disclosed is a transistor device with at least one gate electrode (33), a gate runner (10) connected to the at least one gate electrode (33) and arranged on top of a semiconductor body (100), and a gate pad (20) arranged on top of the semiconductor body (100) and electrically connected to the gate runner (10). The gate runner (10) includes a first metal line (11), a second metal line (12) on top of the first metal line (11), a first gate runner section (101), and at least one second gate runner section (102). The at least one second gate runner section (102) is arranged between the first gate runner section (101) and the gate pad (20) and a vertical cross sectional area of the second metal line (12) in the at least one second gate runner section (102) is less than 50% of the vertical cross sectional area of the second metal line (12) in the first gate runner section (101).