Gate Runner Layout for Uniform Trench Resistance in Semiconductors
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Solution Overview
Problem
Conventional semiconductor devices face challenges in managing current concentration and resistance variations in gate trench portions, leading to potential fractures and increased ON voltage, which affect their operational efficiency and reliability.
Innovation Solution
The semiconductor device incorporates a design with varying gate runner portions, including polysilicon and metal wirings, to equalize resistance differences between trench portions, reducing current concentration and preventing fractures, while also employing a temperature sense diode for overheating prevention.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If uniform gate runner portions are used in all trench portions, then manufacturing is simplified, but resistance variations cause current concentration and potential fractures
Solution Approach 1:
The patent applies local quality by varying the gate runner portion dimensions across different trench portions. Specifically, trench portions closer to the center of the semiconductor device have larger gate runner portions, while those at the edges have smaller gate runner portions. This non-uniform design compensates for resistance variations and prevents current concentration, thereby avoiding fractures while maintaining manufacturing feasibility.
2Reliability
If larger gate runner portions are used to reduce resistance, then current distribution improves, but device area increases
Solution Approach 1:
The patent implements local quality by strategically varying gate runner portion sizes based on their position within the device. Central trench portions receive larger gate runner portions to address higher current density, while peripheral portions use smaller gate runner portions. This position-dependent design optimizes current distribution without unnecessarily increasing the overall device area.
3Reliability
If gate runner portions are varied to equalize resistance, then current concentration is reduced, but manufacturing complexity increases
Solution Approach 1:
The patent applies segmentation by dividing the gate runner structure into multiple discrete portions, each with independently optimized dimensions. The gate runner is segmented into first, second, and third portions with different width and/or thickness characteristics, allowing each segment to be tailored for its specific electrical and mechanical requirements while maintaining overall system reliability.
Data Source
AI summary
Provided is a semiconductor device including: a first trench portion having a predetermined first trench length; a second trench portion having a second trench length longer than the first trench length; a first gate runner portion configured to be electrically connected to an end portion of the first trench portion; and a second gate runner portion configured to be electrically connected to the first gate runner portion and electrically connected to an end portion of the second trench portion. A resistivity per unit length of the first gate runner portion is larger than a resistivity per unit length of the second gate runner portion.