Gate-Segmented RF Transmitter for High-Power Digital Modulation

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Solution Overview

Problem

Existing RF transmitters, particularly for high-speed and high-power applications like 5G mMIMO base stations, face challenges in achieving the required output power and efficiency due to limitations in digital transmitter (DTX) solutions, which are hindered by high parasitics, bandwidth restrictions, and inefficiencies in analog-intensive designs.

Innovation Solution

The implementation of a gate-segmented power output stage in RF transmitters, using a field-effect transistor with segmented gate fingers and drain fingers, combined with a digital driver for individual control of power output stage segments, allows for efficient switch-mode operation and reduced parasitics, enabling higher power levels and improved efficiency.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Adaptability or versatility

If digital modulators are used to provide frequency agility and channel flexibility, then communication adaptability is improved, but output power is reduced due to low power consumption requirements

Engineering Contradiction:
Improvecommunication adaptabilityVSAvoidoutput power
Core Design Contradiction:
Adaptability or versatilityVSPower

Solution Approach 1:

A dedicated power amplifier stage is introduced as an intermediary component between the digital modulator and the antenna. This separate amplifier boosts the low-power digital signal to high power levels without requiring the modulator itself to operate at high power, thus maintaining both communication adaptability and high output power capability

Inventive Principle:
Principle #24Intermediary (Mediator)

Solution Approach 2:

The transmitter is divided into functionally separate stages: a low-power digital modulator section for signal generation and frequency agility, and a high-power amplification section for power boosting. This segmentation allows each component to be optimized for its specific function without compromise

Inventive Principle:
Principle #1Segmentation

2Power

If power amplification is increased to achieve high power output, then output power is improved, but signal distortion increases due to non-linear operation

Engineering Contradiction:
Improveoutput powerVSAvoidsignal fidelity
Core Design Contradiction:
PowerVSManufacturing precision

Solution Approach 1:

Traditional single-stage non-linear power amplification is replaced with a digital signal processing approach. Digital predistortion algorithms pre-compensate the signal to counteract anticipated non-linear distortion, and digital feedback loops continuously adjust parameters to maintain signal fidelity while operating at high power levels

Inventive Principle:
Principle #28Mechanics substitution (Replace mechanical system)

Solution Approach 2:

The system dynamically adjusts amplification parameters and operating conditions based on real-time signal characteristics and feedback. By changing parameters such as gain, compression ratios, and distortion compensation factors, the system maintains high output power while minimizing signal distortion through adaptive control

Inventive Principle:
Principle #35Parameter changes

Data Source

PatentEP4104290B1Digital transmitter with high power output
Publication Date: 2026.05.06 TECH UNIV DELFT
  • EP4104290B1 patent drawingFigure 1~2
  • EP4104290B1 patent drawingFigure 3~5
  • EP4104290B1 patent drawingFigure 6

AI summary

An RF transmitter (1) having a gate-segmented power output stage (2) and a digital driver (5). The gate-segmented power output stage (2) includes a field-effect transistor with a plurality of gate fingers (32) and drain fingers (31) that define a gate periphery. The field-effect transistor comprises a plurality of power output stage segments (3) that each correspond to a respective part of the gate periphery, and that each have a respective power output stage segment input (4). The digital driver (5) has control outputs (6) which are connected to corresponding ones of the respective power output stage segment inputs (4), and is configured for individually switching each of the power output stage segments (3) between an on mode and a cut-off mode in dependence of one or more input signals to obtain a modulated RF carrier signal at an output (7) of the gate-segmented power output stage (2).