Gate-Separated Semiconductor Structure for Lower Parasitic Capacitance
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Solution Overview
Problem
Semiconductor devices face challenges in reducing parasitic capacitance between active regions and power delivery networks, which affects performance and efficiency.
Innovation Solution
The semiconductor device incorporates a gate separation pattern with an air gap between the gate structure and the through electrode, which reduces parasitic capacitance by utilizing an insulating material and creating a low dielectric constant environment.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Power
If a through electrode is formed to penetrate the gate structure for power delivery, then power supply efficiency is improved, but parasitic capacitance increases between the active region and power delivery network
Solution Approach 1:
The gate structure is divided into first and second gate structures separated by a gate separation pattern. This segmentation allows the through electrode to penetrate only the gate separation pattern rather than the entire gate structure, reducing the overlap area between the through electrode and active region, thereby decreasing parasitic capacitance while maintaining power delivery functionality
Solution Approach 2:
An air gap is introduced as an intermediary between the through electrode and the gate structure. The air gap acts as a dielectric layer with low permittivity, reducing the parasitic capacitance formed between the through electrode and the active region beneath the gate structure, while still allowing electrical connection through the through electrode
2Reliability
If the gate structure is made taller to improve transistor control, then device performance is improved, but parasitic capacitance with through electrode increases
Solution Approach 1:
By segmenting the gate structure into separate sections with a gate separation pattern in between, the through electrode only needs to penetrate the separation pattern rather than the full height of the gate structure. This reduces the capacitance-forming overlap area while preserving the full gate control functionality over the channel
Solution Approach 2:
The gate separation pattern extends the separation in the vertical dimension, creating an air gap that reduces parasitic capacitance. This dimensional approach allows the gate to maintain its tall structure for control while the through electrode path is shortened in the vertical direction where capacitance forms
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration effectively decreases parasitic capacitance, enhancing the performance and efficiency of semiconductor devices by minimizing signal delay and power consumption.
Implementation Method 1
decreasing a parasitic capacitance that may exist between an active region and a power delivery network
Implementation Method 2
creating a low dielectric constant environment
Data Source
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AI summary
A semiconductor device includes a base insulation layer (100) including a first surface and a second surface facing the first surface, a channel layer (11Oa-110d) on the first surface of the base insulation layer (100), source/drain patterns disposed in a first direction (D1) parallel to the first surface of the base insulation layer (100) interposing the channel layer (110a-110d), a gate structure (GS) extending in a second direction (D2) crossing the first direction (D1) on the first surface of the base insulation layer (100) and at least partially surrounding the channel layer (110a-110d), a gate separation pattern (GC) crossing the gate structure (GS) and at least partially penetrating the gate structure (GS) in a third direction (D3) perpendicular to the first direction (D1) and the second direction (D2), and a through electrode (190) at least partially penetrating the gate separation pattern (GC) in the third direction (D3).