Gate Separation Structure for Dense Semiconductor Isolation
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Solution Overview
Problem
As semiconductor devices are scaled down to increase degrees of integration, there is a challenge in maintaining effective electrical separation between gate structures while minimizing physical dimensions and distances between them, which affects their performance and integration density.
Innovation Solution
A semiconductor device design that includes a separation structure penetrating through the gate structure and disposed on an isolation region between active regions, with a second separation structure contacting the first separation structure and gate electrodes, allowing for electrical separation while optimizing dimensions and integration.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If gate structures are scaled down to increase integration density, then the degree of integration increases, but electrical separation between gate structures becomes insufficient
Solution Approach 1:
The separation structure is divided into multiple segments: a first separation structure extending into the isolation region and a second separation structure disposed on the first separation structure and penetrating through at least a portion of it. This segmented approach provides multiple levels of electrical isolation, ensuring reliable separation between adjacent gate structures even as they are scaled closer together to increase integration density.
Solution Approach 2:
The separation structure utilizes vertical dimension by extending into the isolation region and penetrating through portions of the first separation structure. This three-dimensional configuration provides electrical separation in the vertical direction while maintaining horizontal integration density, effectively resolving the contradiction between scaling and isolation.
2Productivity
If distance between gate structures is reduced to increase integration, then integration density improves, but manufacturing precision requirements increase
Solution Approach 1:
The separation structure acts as an intermediary element disposed between adjacent gate structures on the isolation region. This intermediary provides a defined physical and electrical boundary that simplifies manufacturing by establishing clear spacing requirements, reducing the precision burden on direct gate-to-gate positioning while maintaining high integration density.
3Reliability
If separation structure width is optimized for electrical isolation, then electrical separation improves, but device complexity increases
Solution Approach 1:
The separation structure serves multiple functions simultaneously: it provides electrical isolation between gate structures, defines active region boundaries, and acts as a spacer during fabrication processes. This multi-functionality reduces the need for additional dedicated structures, maintaining simplicity while achieving reliable electrical separation.
Data Source
AI summary
A semiconductor device includes active regions, including a first active region and a second active region, extending in a first horizontal direction, an isolation region defining the active regions, a gate structure disposed on the isolation region and extending in a second horizontal direction to intersect the active region, and separation structures penetrating through the gate structure and disposed on the isolation region between the first active region and the second active region. The separation structures include a first separation structure extending into the isolation region, and a second separation structure disposed on the first separation structure and penetrating through at least a portion of the first separation structure, and a width of a lower region of the second separation structure in the second horizontal direction is less than a width of an upper region of the first separation structure in the second horizontal direction.