Gate Separation Structure for Consistent Width in Scaled Transistors
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Solution Overview
Problem
As semiconductor devices undergo high integration, achieving the required transistor performance becomes increasingly difficult due to the challenges in manufacturing processes and structural stability of transistors.
Innovation Solution
The semiconductor device employs a self-aligned method to form a substructure of a gate separation structure and cuts the gate electrode to create a final gate separation structure, ensuring consistent width and improved reliability.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If conventional field effect transistor structures are used with high integration, then device density increases, but transistor performance deteriorates due to manufacturing difficulties and structural stability issues
Solution Approach 1:
The gate electrode is segmented into multiple sections by introducing gate separation structures. These structures divide the continuous gate electrode into discrete segments, allowing independent control and improved manufacturing precision. The segmentation enables better structural stability while maintaining high device density through precise positioning of each gate segment.
Solution Approach 2:
A substructure of the gate separation structure is formed in advance before the final gate electrode formation. This preliminary action includes creating a mandrel structure and forming initial separation regions that guide subsequent processing steps, ensuring precise alignment and consistent gate electrode widths while improving manufacturing reliability.
2Area of moving object
If feature size of field effect transistor decreases, then integration density increases, but manufacturing precision and structural stability become more difficult to maintain
Solution Approach 1:
The gate separation structure utilizes self-aligned formation processes where the mandrel structure automatically defines the position and width of gate electrodes. The conformal coating and etching processes self-adjust to maintain consistent dimensions, reducing variability even at reduced feature sizes without requiring additional alignment steps.
3Length of moving object
If gate length and channel length decrease, then device scaling improves, but operational stability and reliability deteriorate
Solution Approach 1:
The gate separation structures introduce local variations in the gate region, creating distinct zones with different electrical characteristics. The separation structures provide localized electrical isolation and mechanical support, enhancing operational stability in critical regions while allowing overall gate length to be reduced for scaling.
Data Source
AI summary
Provided is a semiconductor device. The semiconductor device comprises a first active pattern extending in a first direction on a substrate, a second active pattern which extends in the first direction and is adjacent to the first active pattern in a second direction different from the first direction, a field insulating film placed between the first active pattern and the second active pattern, a first gate structure which crosses the first active pattern, extends in the second direction, and includes a first gate electrode and a first gate spacer, a second gate structure which crosses the second active pattern, extends in the second direction, and includes a second gate electrode and a second gate spacer, a gate separation structure placed on the field insulating film between the first gate structure and the second gate structure.