Gate Separation Structure for 3D Transistor Short-Channel Control
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Solution Overview
Problem
Current semiconductor devices face challenges in scaling density and reliability due to limitations in gate length and short channel effects, particularly in multi-gate transistors with three-dimensional channels.
Innovation Solution
A semiconductor device design featuring first and second active patterns on a substrate with field insulating films and gate electrodes, where a gate separation structure using alternately stacked insulating and oxide films separates the gate electrodes, enhancing reliability and reducing short channel effects.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If a multi-gate transistor with three-dimensional channel is used to increase device density, then scaling capability is improved, but short channel effects worsen due to drain voltage affecting channel potential
Solution Approach 1:
The gate electrode is divided into multiple segments along the channel length, with each segment independently controllable. This segmentation allows separate optimization of gate voltages to suppress short channel effects while maintaining high device density through the multi-gate three-dimensional channel structure
Solution Approach 2:
A carefully engineered gate insulating film with specific thickness and material properties acts as an intermediary between the gate electrode and channel, enabling effective voltage control while isolating the channel from direct drain voltage influence, thus suppressing short channel effects
2Reliability
If gate length is increased to suppress short channel effects, then reliability is improved, but current control capability deteriorates
Solution Approach 1:
The invention transitions from planar gate control to three-dimensional multi-gate control, where gates wrap around the channel in vertical and lateral dimensions. This dimensional change provides superior electrostatic control and current management without requiring increased gate length
Solution Approach 2:
The gate structure serves multiple functions simultaneously: it provides voltage control for current management, electrostatic control for short channel effect suppression, and enables independent segment control for optimized performance across different operating conditions
3Ease of manufacture
If conventional gate separation structure is used, then device fabrication is simplified, but reliability is insufficient due to inadequate gate electrode isolation
Solution Approach 1:
The gate separation structure employs composite materials including silicon nitride and silicon oxide layers in specific configurations. This composite structure provides enhanced isolation between gate electrodes and adjacent active patterns, improving reliability while maintaining compatibility with existing fabrication processes
Solution Approach 2:
The gate separation structure is nested within the overall device architecture, with separation layers integrated between the gate electrode and surrounding active regions. This nested configuration provides effective isolation without adding external complexity to the fabrication process
Data Source
AI summary
A semiconductor device includes a first active pattern extending in a first direction on a substrate, and a second active pattern extending in the first direction on the substrate, the second active pattern spaced apart from the first active pattern in a second direction. The device includes a field insulating film between the first active pattern and the second active pattern on the substrate, a first gate electrode intersecting the first active pattern on the substrate, a second gate electrode intersecting the second active pattern on the substrate, and a gate separation structure on the field insulating film. The gate separation structure separates the first gate electrode and the second gate electrode from each other, the gate separation structure includes a plurality of first sub-insulating films and at least one second sub-insulating film, and the at least one second sub-insulating film is between the first sub-insulating films.