Gate Separation Region Structure for Smaller Semiconductor Gates
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Solution Overview
Problem
The challenge in semiconductor devices is to reduce the area occupied by transistors while maintaining the integrity and performance of the components, particularly in high integration levels, where forming smaller gates becomes crucial.
Innovation Solution
A semiconductor device is designed with an isolation region and gate separation region that includes a gap fill layer and a buffer structure, featuring a buffer liner between the gap fill layer and the isolation region, which applies tensile stress to improve transistor performance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Area of moving object
If the transistor size is reduced to achieve higher integration, then the area occupied by the transistor is reduced, but the manufacturing precision and integrity of components become more difficult to maintain
Solution Approach 1:
The gate separation region is divided into multiple functional layers including a buffer structure with buffer liner and a gap fill layer. This segmentation allows each layer to perform specific functions - the buffer liner provides stress control and the gap fill layer maintains structural integrity - thereby enabling miniaturization while preserving manufacturing precision
Solution Approach 2:
The buffer liner acts as an intermediary layer between the gap fill layer and the isolation region. This intermediary structure mediates the mechanical stress and provides a transition zone that maintains component integrity during the miniaturization process, preventing direct stress concentration that would compromise manufacturing precision
2Area of moving object
If the gate size is reduced for higher integration, then the transistor area is reduced, but the process of forming smaller gates becomes increasingly difficult
Solution Approach 1:
The buffer liner is formed in advance before the gap fill layer is deposited. This preliminary action prepares the structural foundation and stress distribution pattern beforehand, making the subsequent formation of smaller gates more manageable and less prone to manufacturing defects
Solution Approach 2:
The buffer structure modifies the mechanical and electrical parameters of the gate separation region. By changing the stress distribution and dielectric properties through the buffer liner and gap fill layer combination, the formation process of smaller gates becomes more controllable and less difficult
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The design enhances transistor performance by applying tensile stress and reduces defects, improving the overall efficiency and productivity of the semiconductor device.
Implementation Method 1
a buffer structure including a buffer liner between the gap fill layer and the isolation region, between the end portions of the gate line structures facing each other and side surfaces of the gap fill layer, and between the interlayer insulating layers and the side surfaces of the gap fill layer
Data Source
AI summary
A semiconductor device including a gate separation region is provided. The semiconductor device includes an isolation region between active regions; interlayer insulating layers on the isolation region; gate line structures overlapping the active regions, disposed on the isolation region, and having end portions facing each other; and a gate separation region disposed on the isolation region, and disposed between the end portions of the gate line structures facing each other and between the interlayer insulating layers. The gate separation region comprises a gap fill layer and a buffer structure, the buffer structure includes a buffer liner disposed between the gap fill layer and the isolation region, between the end portions of the gate line structures facing each other and side surfaces of the gap fill layer, and between the interlayer insulating layers and the side surfaces of the gap fill layer.