Gate Spacer Protrusion for MBCFET Electrical Insulation
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Solution Overview
Problem
In the manufacturing of multi-bridge-channel MOSFET (MBCFET) semiconductor devices, electrical shorts can occur between the gate structure and the source/drain layer due to lack of electrical insulation.
Innovation Solution
A semiconductor device design featuring a gate structure with a first spacer that includes a central portion overlapping the channels vertically and a protrusion portion protruding from the central portion, which does not overlap the channels, ensuring electrical insulation between the gate structure and the source/drain layer.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If a dummy gate structure and gate spacer are formed on the fin structure, then the fin structure can be etched using them as an etching mask, but electrical shorts may occur between the gate structure and the source/drain layer due to lack of electrical insulation
Solution Approach 1:
The gate spacer is divided into two functional portions: a first portion that overlaps the channel in the vertical direction to provide etching mask functionality, and a second portion (protrusion portion) that protrudes from the first portion and does not overlap the channel to provide electrical insulation. This segmentation allows each portion to fulfill its specific function without compromising the other.
Solution Approach 2:
Different portions of the gate spacer are designed with different spatial characteristics: the first portion is positioned to overlap the channel vertically for precise etching control, while the second portion protrudes horizontally to extend beyond the channel region, creating a local electrical insulation barrier between the gate structure and source/drain layer.
2Productivity
If the gate structure and source/drain layer are positioned adjacent to each other, then device integration is achieved, but electrical shorts occur due to lack of electrical insulation
Solution Approach 1:
The second portion of the gate spacer acts as an intermediary element positioned between the gate structure and the source/drain layer. This protrusion portion creates a physical and electrical barrier that prevents direct contact and potential short circuits, while allowing the gate and source/drain to remain adjacent for integrated device structure.
Data Source
AI summary
Semiconductor devices are provided. A semiconductor device includes a substrate and a gate structure on the substrate. The semiconductor device includes a channel on the substrate. The semiconductor device includes a source/drain layer on the channel. Moreover, the semiconductor device includes a spacer on a sidewall of the gate structure. The spacer includes a central portion overlapping the channel in a vertical direction, and a protrusion portion protruding from the central portion. Related methods of manufacturing semiconductor devices are also provided.