Semiconductor Gate Spacer Segmentation for Electrical Short Prevention
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Solution Overview
Problem
The scaling down of MOSFETs in semiconductor devices leads to a short channel effect, deteriorating operating characteristics and causing electrical shorts between gate electrodes and contacts, which existing manufacturing methods struggle to prevent effectively.
Innovation Solution
A method for manufacturing semiconductor devices that involves forming gate structures with spacers and interlayer insulating layers, creating contact holes, and using sacrificial gap-fill patterns and contact spacers to prevent electrical shorts by ensuring proper insulation and alignment between gate electrodes and contacts.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Area of moving object
If MOSFETs are scaled down to improve integration density, then device size is reduced, but electrical shorts between gate electrode and contact occur
Solution Approach 1:
The gate spacer is divided into two distinct segments: the first gate spacer portion extends from the gate electrode to a first level, while the second gate spacer portion extends from the first level to a second level (higher than the first level). This segmentation allows the contact to be positioned at the higher second level, thereby avoiding electrical shorting with the gate electrode while maintaining compact device dimensions.
Solution Approach 2:
The invention introduces a vertical dimensionality change by forming the second gate spacer portion that extends to a higher level than the first gate spacer portion. This creates a multi-level structure where the contact can be formed at the elevated second level, spatially separating it from the gate electrode in the vertical direction and preventing electrical shorts.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enhances the reliability of semiconductor devices by preventing electrical shorts and improving insulation, thereby maintaining the performance and integrity of the devices despite the challenges posed by scaled-down MOSFETs.
Implementation Method 1
the etch-back process may include an oxygen plasma etching process
Data Source
AI summary
A method for manufacturing a semiconductor device includes forming gate structures spaced apart from each other on a substrate, gate spacers covering sidewalls of the gate structures, and an interlayer insulating layer covering the gate spacers, forming a contact hole that penetrates the interlayer insulating layer to expose a sidewall of at least one of the gate spacers, forming a sacrificial gap-fill pattern filling a lower portion of the contact hole, forming a contact spacer on a sidewall of the contact hole having the sacrificial gap-fill pattern, and forming a contact filling the contact hole after removing the sacrificial gap-fill pattern.