3D Gate Structure Spacers to Prevent Contact Plug Bridging
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Solution Overview
Problem
The integration of semiconductor devices is limited by the area occupied by unit memory cells, and existing three-dimensional structures face challenges in operational reliability due to bridge formation between conductive layers and contact plugs during manufacturing.
Innovation Solution
A semiconductor device with a gate structure featuring alternately stacked conductive and insulating layers, and spacer layers between the conductive layers and contact plugs, which are formed using different methods to prevent or minimize bridge formation by securing distances between conductive layers and voids in spacer layers.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Area of moving object
If three-dimensional stacking structure is adopted to improve integration density, then area occupancy is reduced, but bridge formation between conductive layers and contact plugs occurs during manufacturing
Solution Approach 1:
Spacer layers are introduced as intermediary structures between the contact plug and conductive layers. These spacer layers physically separate the contact plug from the conductive layers, preventing direct contact and bridge formation while maintaining the three-dimensional stacking structure's space efficiency.
Solution Approach 2:
The space between the contact plug and conductive layers is segmented into multiple regions by introducing first and second spacer layers at different positions. This segmentation allows for controlled spacing and prevents bridge formation while maintaining structural integrity.
2Reliability
If spacer layers are introduced to prevent bridge formation, then reliability is improved, but device structure becomes more complex
Solution Approach 1:
Multiple spacer layers (first and second spacer layers) are merged into a coordinated spacing system that works together to prevent bridge formation. This combined approach provides reliable spacing while managing structural complexity through systematic design.
Data Source
AI summary
A semiconductor device including: a gate structure in which conductive layers and insulating layers are alternately stacked; contact plug extending in a stacking direction of the insulating layers through the gate structure; first spacer layers each located between the conductive layer and the contact plug; and second spacer layers each located between the contact plug and the first spacer layer.