3D Gate Stack Bonding With Penetration Structures for Reliability
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Solution Overview
Problem
The integration limit of semiconductor devices is reached as memory cells are stacked on a substrate, and there is a need for improved operational reliability and stability in three-dimensional semiconductor structures.
Innovation Solution
A semiconductor device with a first and second gate structure bonded by a bonding structure, and penetration structures extending through both, along with a manufacturing method that forms openings and penetration structures without sacrificial materials to enhance bonding and reduce defects.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If memory cells are stacked on a substrate to improve integration, then the degree of integration is improved, but structural stability and operational reliability deteriorate
Solution Approach 1:
The device is divided into multiple gate structures (first gate structure, second gate structure) stacked vertically, with each layer serving as an independent functional unit. This segmentation allows for better stress distribution and structural stability while maintaining high integration through vertical stacking of memory cells
Solution Approach 2:
A bonding structure is introduced as an intermediary element between the first and second gate structures. This bonding structure acts as a mediator that enhances structural stability and operational reliability by providing strong adhesion between stacked layers, preventing delamination and mechanical failure in the three-dimensional architecture
2Ease of manufacture
If sacrificial materials are used in forming openings and penetration structures, then manufacturing process complexity is reduced, but bonding strength and structural integrity deteriorate
Solution Approach 1:
The sacrificial material is completely removed (taken out) from the openings before bonding, leaving empty spaces that allow direct contact and bonding between the gate structures. This extraction eliminates the weak interface that would remain if sacrificial material were left in place, thereby maximizing bonding strength while maintaining manufacturing simplicity through the sequential removal approach
Solution Approach 2:
The openings are formed and sacrificial materials are removed in advance before the bonding process. This preliminary action ensures that when bonding occurs, there are no obstructions or weak interfaces, allowing for optimal bonding strength to be achieved without complicating the overall manufacturing process
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The method provides a stable semiconductor structure with improved reliability and reduced manufacturing costs by minimizing defects and unifying processes, enhancing bonding forces and structural integrity.
Implementation Method 1
bonding the first wafer and the second wafer to each other in a state in which the first opening and the second opening are empty
Data Source
AI summary
A semiconductor device may include a first gate structure; a second gate structure located over or on the first gate structure; a bonding structure located between the first gate structure and the second gate structure; and a penetration structure extending through the first gate structure, the second gate structure, and the bonding structure.