Semiconductor Gate Stack Layout for Uniform Source-Drain Contacts
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Solution Overview
Problem
The semiconductor industry faces challenges in forming reliable semiconductor devices at increasingly smaller sizes due to the complexity and difficulty of fabrication processes as feature sizes decrease, affecting production efficiency and cost.
Innovation Solution
The formation of semiconductor device structures using advanced lithography processes and materials, such as FinFETs, with patterned fins and source/drain structures, along with gate stacks and spacer layers, to achieve precise spacing and conductivity, enabling efficient transistor formation.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If feature sizes continue to decrease to increase functional density, then production efficiency and cost are improved, but fabrication process difficulty and reliability increase
Solution Approach 1:
The fabrication process is divided into multiple sequential steps including forming first and second trenches at different depths, selective epitaxial growth in specific regions, and staged doping processes. This segmentation allows each step to be optimized independently, managing the complexity of manufacturing at small feature sizes while maintaining high functional density.
Solution Approach 2:
The method performs preliminary actions by forming isolation regions and shallow trenches before creating the main device structures. Gate dielectric layers and gate electrodes are formed in advance, and selective regions are prepared with different epitaxial growths before final transistor formation. This preliminary structuring simplifies subsequent processing steps.
2Productivity
If feature sizes continue to decrease to increase functional density, then production efficiency and cost are improved, but device reliability deteriorates
Solution Approach 1:
The patent implements local quality by creating different structural configurations in different regions of the semiconductor device. First transistors have gate electrodes extending beyond source/drain regions, while second transistors have gate electrodes contained within source/drain regions. Selective regions have different epitaxial growths and doping concentrations. This local differentiation maintains reliability across varying feature sizes by optimizing each region for its specific function.
Solution Approach 2:
The method employs parameter changes by varying doping concentrations, epitaxial growth thicknesses, and gate electrode dimensions across different regions and device types. Fast ion implantation provides precise control of doping parameters, while selective epitaxial growth adjusts structural parameters. These parameter variations enable reliable device operation at reduced feature sizes by optimizing electrical characteristics for each specific transistor configuration.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach improves the performance of semiconductor devices by allowing for the creation of transistors with low power consumption and high speed, suitable for advanced computing applications, while maintaining manufacturing efficiency and reducing costs.
Implementation Method 1
forming a first source/drain structure and a second source/drain structure over and in the substrate
Implementation Method 2
forming a gate dielectric layer over the substrate and having a first trench, a second trench, a third trench, and a fourth trench
Data Source
AI summary
A method for forming a semiconductor device structure is provided. The method includes forming a first source/drain structure and a second source/drain structure over and in a substrate. The method includes forming a first gate stack, a second gate stack, a third gate stack, and a fourth gate stack over the substrate. Each of the first gate stack or the second gate stack is wider than each of the third gate stack or the fourth gate stack. The method includes forming a first contact structure and a second contact structure over the first source/drain structure and the second source/drain structure respectively. A first average width of the first contact structure is substantially equal to a second average width of the second contact structure.