Gate Stack Structure Using a Halogen Source Layer for Interface Defect Repair
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Solution Overview
Problem
The semiconductor industry faces challenges in forming reliable semiconductor devices at smaller sizes due to increased complexity and difficulty in fabrication processes as feature sizes decrease, requiring innovative methods to improve device performance and reliability.
Innovation Solution
The formation of a semiconductor device structure with a gate stack that includes a halogen source layer between the gate dielectric layer and the work function layer, which provides halogen elements to repair defects such as dangling bonds at the interface, improving carrier mobility and device stability.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If feature sizes continue to decrease to increase functional density, then production efficiency increases and costs decrease, but fabrication process complexity and difficulty increase
Solution Approach 1:
The gate structure is segmented into multiple functional layers: gate dielectric layer, halogen source layer, work function layer, and capping layer. Each layer performs a specific function, allowing the complex gate structure to be built through systematic deposition of simpler individual layers, thereby managing fabrication complexity while achieving advanced device functionality at scaled dimensions
Solution Approach 2:
The halogen source layer is deposited between the gate dielectric and work function layers in advance, before final gate electrode formation. This preliminary placement of halogen atoms at the interface prepares the structure for subsequent defect repair during device operation or annealing, enabling improved device performance without adding complex post-processing steps
2Productivity
If feature sizes continue to decrease, then functional density increases, but device reliability becomes more difficult to maintain
Solution Approach 1:
The halogen source layer acts as an intermediary between the gate dielectric layer and the semiconductor substrate. It provides halogen atoms that diffuse to repair interface defects such as dangling bonds, thereby improving carrier mobility and device reliability. This intermediary layer enables high-performance devices at scaled dimensions by systematically addressing interface quality issues
Solution Approach 2:
The invention changes the chemical composition parameter at the gate dielectric-semiconductor interface by introducing halogen elements. This compositional modification repairs interface defects and improves electrical characteristics, allowing devices to maintain high reliability even as feature sizes decrease and functional density increases
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The halogen source layer enhances the performance and reliability of semiconductor devices by repairing defects, leading to improved carrier mobility and stability, even at smaller feature sizes.
Implementation Method 1
The halogen source layer is configured to provide a halogen element or ion to a surface of a semiconductor fin or a semiconductor substrate below the gate dielectric layer
Data Source
AI summary
Structures and formation methods of a semiconductor device structure are provided. The semiconductor device structure includes a semiconductor substrate and a gate stack over the semiconductor substrate. The gate stack includes a gate dielectric layer and a work function layer. The gate dielectric layer is between the semiconductor substrate and the work function layer. The semiconductor device structure also includes a halogen source layer. The gate dielectric layer is between the semiconductor substrate and the halogen source layer.