Gate Stack Spacer Layout for Lower Parasitic Capacitance
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Solution Overview
Problem
Existing semiconductor devices face limitations in device density and parasitic capacitance issues due to fixed spacer dimensions, which affect source and drain access and disrupt spin state manipulation.
Innovation Solution
A manufacturing method that decouples the dimensions of spacers between gate stacks from those between the source or drain and the closest gate stack, allowing for varied spacer sizes and reduced parasitic capacitance through a multi-step process involving dielectric material deposition, etching, and mask creation.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Object-affected harmful factors
If the width of the spacer separating the gate stack from the source or drain is increased to reduce parasitic capacitance, then parasitic capacitance is reduced, but the source side and drain side access is adversely affected
Solution Approach 1:
The invention divides the spacer structure into two distinct parts: a first spacer between the gate stack and the source/drain, and a second spacer between adjacent gate stacks. This segmentation allows independent optimization of each spacer's width. The first spacer can be made narrow to maintain good access, while the second spacer can be made wide to reduce parasitic capacitance between gate stacks, thereby resolving the contradiction.
2Object-affected harmful factors
If the distance between two gate stacks is increased to reduce parasitic capacitance, then parasitic capacitance is reduced, but the device density is decreased
Solution Approach 1:
By segmenting the spacer structure into first and second spacers with independent width control, the invention enables tight packing of gate stacks (high device density) while maintaining sufficient separation to minimize parasitic capacitance between adjacent gate stacks through optimized second spacer width.
3Ease of manufacture
If the width of the spacer separating the gate stack from the source or drain is fixed to define maximum distance between gate stacks, then manufacturing is simplified, but the optimization possibilities between access and gate stack separation are limited
Solution Approach 1:
The invention introduces two independent spacer width parameters instead of a single fixed dimension. This allows independent optimization of the first spacer for access purposes and the second spacer for gate stack separation, significantly increasing design flexibility and optimization possibilities while maintaining manufacturability through standard deposition and etching processes.
Solution Approach 2:
The spacer structure transitions from a static fixed dimension to a dynamic configurable structure where the widths of the first and second spacers can be independently adjusted according to specific device requirements, enabling adaptation to different design scenarios.
Data Source
AI summary
A semiconductor device includes a substrate; a plurality of gate stacks situated horizontally following one another on the substrate, each gate stack including a layer of a dielectric material in contact with the substrate and a layer of a conductive material on the layer of dielectric material; a source and a drain situated on the substrate on either side of the plurality of gate stacks; a plurality of first spacers made of a first dielectric material, called secondary spacers, having a first width, called width of the secondary spacers, the source and the drain being separated from the closest gate stack by a secondary spacer; at least one main spacer made of a second dielectric material, a main spacer being situated between each gate stack, the width of the main spacer(s) being greater than the width of the secondary spacers.