Semiconductor Gate Structure with Wider End Portion
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Solution Overview
Problem
As semiconductor devices shrink in size, defects occur due to incomplete removal of dummy gate structures during manufacturing, particularly at the end portions, leading to reduced production yield and reliability.
Innovation Solution
The semiconductor device design includes a gate structure with a wider end portion than its linear portion, where the width of the end portion is greater than the width of the linear portion, achieved by using a photomask with an end portion width greater than the linear portion width and performing a photolithography process, which helps in reducing defects by ensuring complete removal of the dummy gate structure.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a conventional gate structure with uniform width is used, then the manufacturing process is simpler, but defects occur due to incomplete removal of dummy gate structures at the end portions
Solution Approach 1:
The gate structure employs an asymmetric width design where the end portion has a greater width than the linear portion. This asymmetric configuration ensures that the dummy gate structure at the end portion is more prominent and can be completely removed during manufacturing, thereby improving production yield and reliability without significantly complicating the overall device structure.
2Reliability
If the gate structure end portion width is increased, then complete removal of dummy gate structure is ensured, but the device dimensions and manufacturing complexity increase
Solution Approach 1:
The gate structure applies local quality by varying the width only at the end portion while maintaining a standard width for the linear portion. This localized modification ensures complete dummy gate removal at the critical end portion without unnecessarily increasing the overall device dimensions or complicating manufacturing precision requirements across the entire structure.
3Shape
If photomask with varying width is used, then the wider end portion is achieved, but the photolithography process becomes more complex
Solution Approach 1:
The photomask is segmented into distinct regions: a linear portion with standard width and an end portion with increased width. This segmentation allows the photolithography process to create the varied width profile through a single patterning step, achieving the desired gate structure shape without requiring multiple complex lithography steps or advanced manufacturing techniques.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This design effectively decreases defects and enhances the production yield and reliability of semiconductor devices by ensuring complete removal of the dummy gate structure, leading to improved manufacturing efficiency.
Implementation Method 1
achieved by using a photomask with an end portion width greater than the linear portion width and performing a photolithography process
Data Source
AI summary
A semiconductor device may include an active region extending primarily in a first direction on a substrate. A gate structure may be disposed to intersect the active region, and extend primarily in a second direction intersecting the first direction. A gate isolation pattern may contact one end of the gate structure. The gate structure may include a plurality of portions each having different widths in the first direction, and the gate isolation pattern may have a width greater than a width of at least one of the plurality of portions of the gate structure.