Gate Conductive Pattern Thickness for Threshold Voltage Control
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Existing semiconductor devices face challenges in achieving high operating speed and low power consumption while maintaining reliability, particularly in controlling threshold voltage and preventing unintended changes in work functions.
Innovation Solution
The semiconductor device incorporates a substrate with first and second active regions, featuring gate conductive patterns with varying thicknesses and work functions. The first gate conductive pattern has a thinner thickness and lower work function compared to the second, allowing for controlled threshold voltage differences between transistors.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If gate conductive patterns with different thicknesses are used in different active regions, then threshold voltage control is improved, but device complexity increases
Solution Approach 1:
The patent applies local quality by forming gate conductive patterns with different thicknesses in different active regions. Specifically, a first gate conductive pattern with a first thickness is formed in a first active region, while a second gate conductive pattern with a second thickness (different from the first) is formed in a second active region. This allows each region to have optimized electrical characteristics tailored to its specific requirements, thereby improving threshold voltage control without requiring complete redesign of the entire device structure.
2Reliability
If gate conductive patterns with different work functions are used, then electrical properties are improved, but manufacturing precision requirements increase
Solution Approach 1:
The patent implements parameter changes by utilizing gate conductive patterns with different work functions in different active regions. The first gate conductive pattern has a first work function, while the second gate conductive pattern has a second work function that is different from the first. This variation in work function parameters enables optimization of electrical properties such as threshold voltage and carrier injection characteristics, improving overall device reliability while the manufacturing process is designed to accommodate these parameter variations.
Data Source
AI summary
A semiconductor device includes a substrate having a first active region and a second active region, a first gate conductive pattern that extends conformally in a first recess in the first active region, and a second gate conductive pattern that at least partially fills a second recess in the second active region. The first gate conductive pattern has a first thickness in a horizontal direction on an inner lateral surface of the first recess. The second gate conductive pattern has a second thickness in the horizontal direction on an inner lateral surface of the second recess. The first thickness is less than the second thickness.